The difference between the performance of TSVs manufactured using SF6/O2 plasma etching or a Bosch process is explored through simulations. The geometric ratio of the sample TSV is approximately 5μm:58μm. The electrical performance of the devices is explored through capacitance and resistance extraction, while the reliability is analyzed using thermo-mechanical and electromigration simulations ...

Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching ...

A method based on the sidewall transfer technique for fabricating two-dimensional (2D) nano-mold on a silicon substrate was developed. Instead of using expensive nanolithography, the authors fabricated 2D silicon nano-mold using standard ultraviolet lithography, conformal deposition of gold by radio frequency sputtering, argon sputter etching and deep reactive ion etching (DRIE). This technique...

The LDRD entitled “Role of Defects in 111-Nitrde Based Devices” is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report we summarize our studies such as i) the MOCVD gr...

Articles you may be interested in Surface encapsulation for low-loss silicon photonics Appl. Fabrication of high-Q chalcogenide photonic crystal resonators by e-beam lithography Appl.

Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2...

Flexible broadband antireflective and light-absorbing nanostructured gold thin films are fabricated by gold vapor deposition onto Teflon films modified with nanocone arrays. The nanostructures are created by the oxygen plasma etching of polystyrene bead monolayers on Teflon surfaces. The periodicity and height of the nanocone arrays are controlled by the bead diameter and the overall etching ti...

Semiconductor devices with shallow junctions can be fabricated using plasma immersion ion implantation. In this technique BF3 gas has been used as the boron dopant source due to its low toxicity. Not only are ions implanted but, because of the fluorine ions, there is etching and deposition at the wafer surface. Therefore, the relationship between total dose and processing time is not straightfo...

The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer resolution. The basis of plasma atomic layer etching PALE is forming a layer of passivation that allows the underlying substrate material to be etched with lower activation energy than in the absence of the passivation. The subsequent removal of the passivation with caref...

The effect and influence of dry plasma etching processes of Si=SiGe using HBr for the formation of diode mesa structures has been investigated to minimise sidewall leakage current. To characterise sidewall damage electrically, Si-based resonant interband tunnel diodes (RITD) were processed and the completed RITDs compared by their peak-to-valley current ratio (PVCR) and valley current density (...