in this experimental work, by using the method of plasma-chemical etching, we have dealtwith the causes of the creation of a distorted layer on the surface of silicon wafers during mechanicalmachining processes, in addition, the elucidation of connections between the structure of this layer andcharacteristic parameters of the mechanical strength of these wafers have been studied. experimentalre...

Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full...

Edge engineering is important for both fundamental research and applications as the device size decreases to nanometer scale. This especially case graphene because a edge shows totally different electronic properties depending on atomic structure termination. It has recently been shown that an atomically precise zigzag can be obtained by etching graphite using hydrogen (H) plasma. However, term...

Parylene C, an emerging material in microelectromechanical systems, is of particular interest in biomedical and lab-on-a-chip applications where stable, chemically inert surfaces are desired. Practical implementation of Parylene C as a structural material requires the development of micropatterning techniques for its selective removal. Dry etching methods are currently the most suitable for bat...

This work characterized the Cl2/HBr ion-enhanced plasma-surface interactions with poly-silicon as a function of the gas composition, ion energy, ion incident angle and other important process parameters. A realistic inductively coupled plasma beam apparatus capable of generating ions and neutrals representative of a real commercial etcher was constructed and utilized to simulate accurately a hi...

Figure 1 . Anisotropic etching of graphite by H 2 -plasma. a–c) AFM images of pristine, 50 W plasma-etched, and 100 W plasma-etched graphite. Plasma etching was performed at 500 ° C for 2 h. Magnifi ed images for the marked areas are shown. d) Measured maximum etching rate of graphite at various etching temperatures. The plasma power was 100 W. Solid lines represent Lorentzian line shape fi ts....

In this paper, dry etching of silicon micro-trenches were completed with a time multiplexed inductively coupled plasma (ICP) etcher. By change the time of etching and passivation cycles, applied electrode and coil powers, gas flow rates and the gas flow overlap due to the finite time response of the mass flow controllers, the etch rate of silicon and mask materials, aspect ratio, the profiles o...

Circular and linear zone plates have been fabricated on the surface of silicon crystals for the energy of 8 keV by electron beam lithography and deep ion plasma etching methods. Various variants of compound zone plates with first, second, third diffraction orders have been made. The zone relief height is about 10 mkm, the outermost zone width of the zone plate is 0.4 mkm. The experimental testi...

low temperature plasma technology is well established in surface modification of polymer materials on industrial scale. this method modifies surface properties of polymers without chemicals, manual work and reducing chemicals and energy consumption. in this study, low pressure plasma treatment was used to develop hydrophilic properties of polyethylene terephthalate (pet) fabrics. it was found t...