Related Articles Long wavelength (>1.55μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals Appl. Phys. Lett. 102, 073103 (2013) Intraband optical transition in InGaAs/GaAs pyramidal quantum dots J. Appl. Phys. 113, 064310 (2013) Development of polaron-transformed explicitly correlated full configuration interactio...

We report the temperature-dependent photoluminescence of single site-controlled and self-assembled InAs quantum dots. We have used nanoimprint lithography for patterning GaAs(100) templates and molecular beam epitaxy for quantum dot deposition. We show that the influence of the temperature on the photoluminescence properties is similar for quantum dots on etched nanopatterns and randomly positi...

Inducing strong coupling Quantum dots, or artificial atoms, are being pursued as prospective building blocks for quantum information processing architectures. Communication with other, distant quantum dots requires strong coupling between photons and the electronic states of the dots. Mi et al. used double quantum dots defined in silicon and embedded in a superconducting cavity to achieve such ...

This thesis presents ab initio studies of two kinds of physical systems, quantum dots and bosons, using two program packages of which the bosonic one has mainly been developed by the author. The implemented models, i.e., configuration interaction (CI) and coupled cluster (CC) take the correlated motion of the particles into account, and provide a hierarchy of computational schemes, on top of wh...

Articles you may be interested in RHEED transients during InAs quantum dot growth by MBE Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a " nucleation-augmented " method Appl. Area-controlled growth of InAs quantum dots and improvement of...

Chemical precipitation method was used in order to synthesize CdSe:Ag quantum dots (2-3 nm). Their Physical properties and characteristics were assessed by X-ray diffraction, ultra violet-visible spectrophotometer and TEM (Transmission Electron Microscope) and it was shown that the obtained CdSe:Ag quantum dots are cubic with high-quality. Antibacterial effects of CdSe:Ag nanoparticles against ...

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By in...

In this article, the syntheses and optical properties of core/shell quantum dot (CdSe/ZnS) and their applications are reviewed. Nevertheless, the main focus is to provide an overview on biological applications of quantum dots that contain imaging, targeting, and sensing. We discuss the different synthetic methods, optical properties (photoluminescence intensity, absorption, and fluorescence spe...

CdSe quantum dots were in situ deposited on various structures of TiO2 photoanode by successive ionic layer adsorption and reaction (SILAR). Various sensitized TiO2 structures were integrated as a photoanode in order to make quantum dot sensitized solar cells. High power conversion efficiency was obtained; 2.89 % (Voc=524 mV, Jsc=9.78 mA/cm2, FF=0.56) for the cells that sensitized by SILAR meth...