• Low-saturation current PureB Si diodes with B-deposition from 50 °C to 700 °C. Robust chemical and electrical behavior coupled B-bonding structure at interface. PureGa only Ga wetting layers 400 are electrically similar diodes. A layer before B deposition (PureGaB) gives better robustness than 4-nm-thin PureGaB can be contacted Al while alone Schottky formation. Nanolayers of pure boron (Pure...