The scaling of CMOS devices is about to reach fundamental limits, and this prompts the development of new technologies in semiconductor industry. Spin-based electronics or spintronics is considered as one of the alternatives in ‘beyond CMOS’ research. Silicon, the main element of microelectronics, appears to be the perfect material for spin-driven applications. Purely electrical spin injection ...

Paramagnetic metal ions with fast-relaxing electronic spin and anisotropic susceptibility tensor provide a rich source of structural information that can be derived from pseudo-contact shifts, residual dipolar couplings, dipole-dipole Curie spin cross-correlation, and paramagnetic relaxation enhancements. The present study draws attention to a cross-correlation effect between nuclear relaxation...

Spin relaxation close to the glass temperature of CuMn and AuFe spin glasses is shown, by neutron spin echo, to follow a generalized exponential function which explicitly introduces hierarchically constrained dynamics and macroscopic interactions. The interaction parameter is directly related to the normalized Tsallis nonextensive entropy parameter q and exhibits universal scaling with reduced ...

A model describing spin-polarized current via discrete energy levels of a metallic nanoparticle, which has strongly asymmetric tunnel contacts to two ferromagnetic leads, is presented. In absence of spin relaxation, the model leads to a spin accumulation in the nanoparticle, a difference between the chemical potentials of spin-up and spin-down electrons, proportional to the current and the Jull...

We report results of calculations of the effect of spin-orbit interaction on electron spin relaxation in a lateral quantum dot. Our study is motivated by puzzling results of high source-drain transport measurements of singlet-triplet transitions of two electrons in lateral and vertical devices that show a strong asymmetry as a function of the applied magnetic field. Using exact diagonalization ...

This paper studies the relaxation of the molecular spin angular velocity in the framework of generalized extended Navier-Stokes theory. Using molecular dynamics simulations, it is shown that for uncharged diatomic molecules the relaxation time decreases with increasing molecular moment of inertia per unit mass. In the regime of large moment of inertia the fast relaxation is wave-vector independ...

Silicon, the main material of microelectronics, is predominantly composed of nuclei with zero spin and is characterised by weak spin-orbit interaction in the conduction band. This insures long distance spin propagation through the bulk, which in combination with a possibility of injecting spin at room temperature [2] makes fabrication of spin-based switching devices in the near future feasible....

Title of Dissertation: Dynamics and Chemical Shielding in a Small Protein from NMR Spin Relaxation Experiments Jennifer Blake Hall, Doctor of Philosophy, 2006 Directed By: Prof. David Fushman Department of Chemistry and Biochemistry NMR spin relaxation spectroscopy is a proven method for characterization of the timescales and amplitudes of intramolecular motions in proteins. In a typical NMR re...

Liquid crystals are composed of flexible organic molecules and capable of forming different ordered structures in their mesophases. Nuclear spin relaxation [1], [2] is a powerful technique that provides useful information on the molecular dynamics of liquid crystals. There are collective director fluctuations, molecular reorientation and internal rotations in flexible end chains. Recently inter...

We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T(1) times agree very well with NMR data available for T>1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sublinear temperature dependence T(...