نتایج جستجو برای: spin relaxation

تعداد نتایج: 193406  

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تربیت مدرس 1381

وجود بیش از دو فاز مغناطیسی بویژه انتقال فاز ناپایدار فرومغناطیسی در دمای بالا ( حدود دمای اتاق ) در ترکیب بین فلزی‏‎gd2al‎‏ این سوال را مطرح می سازد که آیا انتقال فاز ناشی از ناخالصی است . از آنجایی که طیف اشعه ایکس قبل و بعد از عملیات حرارتی نمونه ساختار شبکه ای ترکیب فوق را اورترومبیک نشان داده است ، طیف اشعه ایکس برای ترکیباتی با انتقال فاز مغناطیس پایدار که احتمالا ناشی از پدیده ‏‎spin lat...

Background & Aims: In recent years, iron oxide nanoparticles have been used in contrast-enhanced magnetic resonance imaging for diagnosing a wide range of diseases. In order to provide biocompatibility and prevent the toxicity of the nanoparticles, using organic or inorganic coating around these nanoparticles is important for their application. The aim of this study is to investigate the effect...

Journal: :iranian journal of radiation research 0
n.n.a razak school of physics, university sains malaysia, 18000, pulau pinang, malaysia a.a. rahman 1school of physics, university sains malaysia, 18000, pulau pinang, malaysia s. kandaiya 1school of physics, university sains malaysia, 18000, pulau pinang, malaysia i.s. mustafa 1school of physics, university sains malaysia, 18000, pulau pinang, malaysia a.a. mahmoud 1school of physics, university sains malaysia, 18000, pulau pinang, malaysia n.z. yahaya school of distance education, university sains malaysia, 18000, pulau pinang, malaysia

background: an effective polymer gel dosimeter can be fabricated by varying the composition of its chemical components. materials and methods: the magat gel dosimeter formulations that used different compositions of methacrylic acid (maa) and gelatin were extensively investigated in the present study according to the r2–dose response and r2–dose sensitivity. the irradiation of magat gel was per...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه پیام نور - دانشگاه پیام نور استان فارس - دانشکده علوم پایه 1389

این واقعیت که حالت های اسپین الکترون (به جای بار الکتریکی) بسیار کمتر حساس به نوفه های الکترومغناطیسی هستند، باعث آن شده است که امروزه تلاش وافری برای توسعه دستگاههای اسپینترونیکی (به جای الکترونیکی) به عمل آید. در این راستا دسته ای ازموادکه شامل فلزات و حتی نیمه هادی های آلی هستند برای استفاده در فناوری اسپینترونیک پیشنهاد شده است. یک کاندیدای مناسب برای چنین کاربردهایی، تک لایه ای از اتم های ...

Journal: :Physical review letters 2013
N J Harmon M E Flatté

A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g., from multiple traps, site-energy disorder, and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intrasite spin relaxation) each ...

1998
S. Kadlecek T. Walker D. Walter W. Happer

Spin-exchange optical pumping [1] uses spin-exchange collisions between He atoms and optically pumped Rb atoms to produce large quantities of highly spin-polarized He for a variety of applications, including medical imaging [2] and spin-polarized targets [3]. The efficiency of polarized He production is determined by two fundamental rates: the Rb-He spin-exchange rate and the Rb spinrelaxation ...

2016
Marcin Kurpas Martin Gmitra Jaroslav Fabian

First-principles calculations of the essential spin-orbit and spin relaxation properties of phosphorene are performed. Intrinsic spin-orbit coupling induces spin mixing with the probability of b2 ≈ 10−4, exhibiting a large anisotropy, following the anisotropic crystalline structure of phosphorene. For realistic values of the momentum relaxation times, the intrinsic (Elliott-Yafet) spin relaxati...

2008
M. Willander

Electron spin relaxation caused by the D’yakonov-Perel’ mechanism is investigated theoretically in asymmetrical A3B5 heterostructures. The total spin relaxation anisotropy is demonstrated for a wide range of structure parameters and temperatures. The spin relaxation rates dependences are derived for GaAs-based heterojunction and triangular quantum well. The calculations show a few orders of mag...

2016
Ahmet Avsar Ivan Jesus Vera-Marun Jun You Tan Gavin Kok Wai Koon Kenji Watanabe Takashi Taniguchi Shaffique Adam Barbaros Özyilmaz

The elimination of extrinsic sources of spin relaxation is key to realizing the exceptional intrinsic spin transport performance of graphene. Toward this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture that allows us to make a comparative study by separately investigating the roles of the substrate and polymer residues on ...

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