نتایج جستجو برای: strained si nano p
تعداد نتایج: 1386055 فیلتر نتایج به سال:
This paper presents measurements of the avalanche multiplication factor (M 1) in SiGe HBT’s using a new technique capable of separating the avalanche multiplication and Early effect contributions to the increase of collector current with collector-base bias, as well as allowing safe measurements at practical current densities. The impact of collector doping, current density, Ge profile, and ope...
We have studied the electron-transport properties of strained-Si on relaxed Si12xGex channel MOSFETs using a Monte Carlo simulator adapted to account for this new heterostructure. The low-longitudinal field as well as the steadyand nonsteady-state high-longitudinal field transport regimes have been described in depth to better understand the basic transport mechanisms that give rise to the perf...
properties as a n-type dopant in Silicon Germanium (SiGe), to enable the fabrication of a wide range of devices. With the recent success of the strained Si MOSFET, new markets are expected to be developed based upon strained Si/relaxed SiGe CMOS circuits. An understanding of n-type dopant diffusion in SiGe, specifically the formation of the source/drain regions in the NMOS and the n-body region...
A phenomenological lattice dynamics model based on the bond-charge model has been developed that describes how strain affects phonon frequencies and elastic constants in groups IV ~homopolar! and III-V ~heteropolar! semiconductor thin films and strained layers. A quasiharmonic approach is adopted, using force constants that depend linearly on strain. This model uses available experimental data ...
In this paper, a charge sheet surface potential based model for strained-Si nMOSFETs is presented and validated with numerical simulation. The model considers sub band splitting in the 2-DEG at the top heterointerface in SiGe layer and also the dependence of electron concentration at heterointerface with the gate oxide. The model is scalable with strained-Si material parameters with physically ...
We discuss boron diffusion in biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created strain in silicon by adding a germanium mole fraction to the silicon in order to perform a theoretical analysis. The strain energy of the charged defects was calculated from ab-initio calculation whereas the diffusivity of boron was extracted from the Arrhenius formul...
SSOI substrates were successfully fabricated using He ion implantation and annealing to relax thin (< 500nm) SiGe buffer layers, bonding and layer transfer processes to realize strained-Si layers onto oxide layers. The reduced thickness of the SiGe buffer possess numerous advantages such as reduced process costs for epitaxy and for reclaim of the handle wafer if the layer splitting is initiated...
GeSn alloys with Sn contents of 8.4 % and 10.7 % are grown pseudomorphically on Ge buffers on Si (001) substrates. The alloys as-grown are compressively strained, and therefore indirect bandgap. Undercut GeSn on Ge microdisk structures are fabricated and strained by silicon nitride stressor layers, which leads to tensile strain in the alloys, and direct bandgap photoluminescence in the 3-5 µm g...
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