This work presents a new artificial neural network (ANN) model formulation for RF high-power transistors which includes the S-parameters of active device. improves small-signal extrapolation capability, and OFF-state impedance approximation, making it suitable Doherty power amplifier (DPA) design. capability plays key role in correct load modulation prediction, since, at low levels, peaking PA ...

This document presents a method to optimize integrated LDMOS (Lateral Double-Diffused MOSFET) transistors for use in very high frequency (VHF, 30-300 MHz) dc-dc converters. A transistor model valid at VHF switching frequencies is developed. Device parameters are related to layout geometry and the resulting layout vs. loss tradeoffs are illustrated. A method of finding an optimal layout for a gi...

This paper presents the results of comparative reliability study of C–V characteristics through three accelerated ageing tests for stress applied to an RF LDMOS: Thermal shock tests (TST, air–air test), thermal cycling tests (TCT, air–air test) and high temperature storage life (HTSL). The two first tests are carried out with a drain current flowing through the device during stress. The investi...

Based on the self-developed standard process RF-LDMOS device, a new ultra-wideband RF power amplifier is designed in this letter. The removes absorbing resistor and capacitor series structure at end of drain. stability circuit enhanced by pre-matching circuit. Considering small impedance value high-power it difficult to achieve broadband matching. novel tapering drain transmission has been deve...