In recent years, graphene has received so much attention because of its superlative properties and potential to revolutionize electronics, especially in VLSI. This study analyzes the effect single-event upset (SEU) an SRAM cell, which employs a metal-oxide semiconductor type nano-ribbon field transistor (MOS-GNRFET) compares results with another cell designed using PTM 10 nm FinFET node. Our si...

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission....

<span>This paper studies the impact of fin width channel on temperature and electrical characteristics field-effect transistor (FinFET). The simulation tool multi-gate field effect (MuGFET) has been used to examine FinFET characteristics. Transfer with various temperatures (W<sub>F</sub>=5, 10, 20, 40, 80 nm) are at first simulated in this study. results show that increasing e...