silicon nanowire (sinw) arrays were produced by electroless method on polycrystalline si substrate, in hf/ agno3 solution. although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. in order to study the influence of etching time (which affects the sinws length) on d...

ZnO nanostructure films were deposited by radio frequency (RF) magnetron sputtering on etched silicon (100) substrates using dry Ar/SF6 plasma, at two etching times of 5 min and 30 min, and on non etched silicon surface. Energy dispersive X-ray (EDX) technique was employed to investigate the elements contents for etched substrates as well as ZnO films, where it is found to be stoichiometric. Su...

Black silicon (BSi) represents a very active research area in renewable energy materials. The rise of BSi as a focus of study for its fundamental properties and potentially lucrative practical applications is shown by several recent results ranging from solar cells and light-emitting devices to antibacterial coatings and gas-sensors. In this paper, the common BSi fabrication techniques are firs...

field ion microscopy (fim) and scanning tunneling microscopy (stm) have found a wide application in nanotechnology. these microscopes use a metallic nanotip for image acquisition. resolution of fim and stm images depends largely on the radius of nanotip apex; the smaller the radius the higher the resolution. in this research, for tungsten nanotip fabrication, electrochemical etching of tungsten...

We have developed a process for the three-dimensional (3D) machining of p-type silicon on a microand nano-scale using high-energy ion beam irradiation with one or more energies and fluences, followed by electrochemical anodization in hydrofluoric acid. We present a study of the dependence of our fabricated structures on irradiating ion energies, fluences, geometries and wafer resistivity. All t...

A method of determining the connectivity of ion-conducting hydrophilic channels within the Nafion polymer electrolyte membrane by way of pore-directed nanolithography has been developed. Electrochemical etching of a silicon surface is performed through a Nafion-membrane mask. The resulting silicon surface imaged by tapping-mode atomic force microscopy (TMAFM) provides a footprint of the hydroph...

Porous-silicon (PS) multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si) substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS) structure with multiple bandgap energy. Photovoltaic devices were fabric...

Porous GaAs was prepared using electrochemical anodization technique of a cristalline GaAs wafer in hydrofluoridric (HF) acid based-solution at different manufacturing conditions. The physical properties of porous GaAs are mainly determined by the shape, diameter of pores, porosity, and the thickness of deposited porous layers. Depending on the etching parameters such as current density, HF con...