An H⁺-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization, but  they are difficult to fabricate by a single fabrication process because of the bulky and brittle referen...

As the manufacturing process level of semiconductor devices continues to improve, device size gradually decreases, and are affected by single event effect more severely. In this paper, physical particle incident N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET) is simulated. By changing incidence position, angle, LET value, temperature, transient current variation with time ...

There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel’s conductance individually. Using first principle calculations, we propose an alternative scheme to open a band gap in ABC-stacked FLG namely via single-side adsorption. T...

This research has been performed to improve upon optical qualities exhibited by metallic-semiconductor nanostructures in terms of their ability to excite electrons and generate current through the fabricated device. Plasmonic interactions become very influential at this scale, and can play an important role in the generation of photocurrent throughout the semiconductor. When the device is fabri...

Articles you may be interested in Observation of gate bias dependent interface coupling in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method Appl. Trap evaluations of metal/oxide/sil...

Evaluation techniques for semiconductor devices are keys for device development with low cost and short period. Especially, dopant and depletion layer distribution in device is critical for electrical property of the device and is needed to be evaluated. Super-higher-order nonlinear dielectric microscopy (SHO-SNDM) is one of the promising techniques for semiconductor device evaluation. We devel...

Structures in which magnetic and electronic materials are combined offer a variety of possibilities for realization of devices with improvement functionality or performance compared to conventional devices. We have designed, characterized, and analyzed a novel hybrid magnetoelectronic device: a monolithic field-effect-transistor-amplified magnetic field sensor in which a granular tunnel magneto...

In the present day, the information technologies and telecommunications sector continually increase their demand for low cost, low power consumption, high performance electroluminescent devices for display applications. Furthermore, general lighting applications, such as white light and large array colour displays, would also benefit from an increase in the overall efficiency. Several technolog...

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4 eV. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of ...

We present a novel n-type InGaAs quantum-well metal–oxide–semiconductor field-effect transistor (QW-MOSFET) fabricated by a self-aligned gate-last process and investigate relevant Si-like manufacturing issues in future III–V MOSFETs. The device structure features a composite InP/ Al2O3 gate barrier with a capacitance equivalent thickness (CET) of 3 nm and non alloyed Mo ohmic contacts. We have ...