This paper presents a switched-capacitor (SC) band-pass biquad using a simple quasi-unity gain amplifier. In sub-nanometer CMOS technologies the intrinsic gain of the transistors is low; this increases the difficulty of designing high gain amplifiers. The proposed SC filter is based on the Sallen-Key biquad and it requires only a simple low gain amplifier. A differential filter circuit, includi...

This paper proposes a module of a high gain and high swing 2-stage amplifier. It is suitable for building a general operational amplifier in a modular fashion with various optional performances. The proposed module alone offers opened-loop voltage gain up to 124 dB and GBW of 10 MHz without loading conditions. To assemble a 124 dB voltage gain operational amplifier with load driving capacity of...

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

..4bstract—A novel ultrabroad-band amplifier configuration suitable for GaAs FET’s has been developed. The developed amplifier circuit operates as a capacitor-resistor ( C–R ) coupled mnpfifier circuit in the lowfrequency range in which IS21 I for the GaAs FET’s is constant. It also operates as a lossless impedance matching circuit in the microwave frequency range in which IS21 I for the GaAs F...

We report the experimental demonstration of a gyrotron traveling-wave-tube amplifier at 250 GHz that uses a photonic band gap (PBG) interaction circuit. The gyrotron amplifier achieved a peak small signal gain of 38 dB and 45 W output power at 247.7 GHz with an instantaneous -3  dB bandwidth of 0.4 GHz. The amplifier can be tuned for operation from 245-256 GHz. The widest instantaneous -3  dB b...

A high-swing, high-performance CMOS telescopic operational amplifier is described. The high swing of the op-amp is achieved by employing the tail and current source transistors in the deep linear region. The resulting degradation in differential gain, common-mode rejection ratio (CMRR), and other amplifier characteristics are compensated by applying regulatedcascode differential gain enhancemen...

in this paper, a low voltage and low power (lv/lp) operational transconductance amplifier (ota) using fgmos (floating-gate mos) transistor is proposed. the relative tuning range of 50 is achieved in this ota while only consumes 40 µw with 1.0 v supply voltage in tsmc 0.18 µm cmos technology. the simulation results of the proposed ota show an open loop gain of 30.2 db and a unity gain frequency ...

In this paper, parameters related to the sensitivity of the interface circuits for capacitive sensors are determined. Both the input referred noise and capacitance of the input transistors are important for capacitive sensitivity. Chopping is an effective technique for signal conditioning circuits because of its capability of reducing circuit noise at low frequencies. The capacitive sensitivity...

In this paper we present low-power 77-GHz power amplifier (PA) for the long range automotive radar. The proposed amplifier is designed using TSMC 0.13-μm RF CMOS (fT/fmax=120/140 GHz) technology, and it is powered by a 1.5V supply. To reduce power dissipation, we consider bias voltage, transistor size optimization, matchings and layout optimization. To improve power gain of the amplifier, it ha...