This paper presents an improved linearity variable-gain amplifier (VGA) in 0.18-µm CMOS technology. The lineari­ty improvement is resulted from employing a new combinational technique, which utilizes third-order-intermodulation (IM3) cancellation mechanism using second-order-intermodul­ation (­IM2) injection, and intermodulation distortion (IMD) sinking techniques. The proposed VGA gain cell co...

This article proposed a simple self cascode RGC amplifier configuration to increase the gain and bandwidth. The cascode amplifier eliminates the miller capacitance between input and output and facilitates high gain, high input and output impedance with high bandwidth. However, the cascode amplifier requires relatively high supply voltage for proper operation and it decreases the output voltage ...

In this paper, analysis, simulation and design of a distributed amplifier (DA) with 0.13µm CMOS technology in the frequency range of 3-40 GHz is presented. Gain cell is a current reused circuit which is optimum in gain, noise figure, bandwidth and also power dissipation. To improve the noise performance in the frequency range of interest, a T-matching low pass filter LC network which is utilize...

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

A novel technique for a self-equalized distributed amplifier is presented by showing the analogy between transversal filters and distributed amplifier topologies. The appropriate delay and gain coefficients of amplifier circuit are obtained by a Fourier expansion of the raised cosine spectrum in the frequency range of 0-40GHz.

a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...

a novel low noise trans-impedance amplifier is proposed using low cost 0.18 µm cmos technology. a resistive-capacitive feedback is used to extend the bandwidth of the amplifier. as the structure is inductor less, it is suitable for low cost integrated optical interconnects. in this paper improved particle swarm optimization have applied to determine optimal trans-resistance and noise of propose...

Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...

Raman amplification of a 49 cm Bismuth oxide (Bi2O3) as a nonlinear gainmedium based erbium doped fiber amplifier (EDFA) is reported in new and compactdesign in near infrared spectral regions. The bismuth glass host provides theopportunity to be doped heavily with erbium ions to allow a compact optical gain fiberamplifier design by using reduced fiber length and the 1480...