Work hardening in crystalline materials is related to the accumulation of statistically stored dislocations in low-energy structures. We present here a model which includes dislocation dynamics in the rate-independent setting for plasticity. Three basic physical features are taken into account: (i) the role of dislocation densities in hardening; (ii) the relations between the slip velocities an...

This paper analyzes the extent to which ethnic skill differentials are transmitted across generations. I assume that ethnicity acts as an externality in the human capital accumulation process. The skills of the next generation depend on parental inputs and on the quality of the ethnic environment in which parents make their investments, or "ethnic capital." The empirical evidence reveals that t...

a. Rationale for protection. The protection of confidential business information dates at least to Roman law, which afforded relief against a person who induced another's employee to divulge secrets relating to the master's commercial affairs. The modern law of trade secrets evolved in England in the early 19th century, apparently in response to the growing accumulation of technical know-how an...

In a high mobility two-dimensional electron gas (2DEG) realized in a GaAs / Al0.3Ga0.7As quantum well we observe changes in the Shubnikov-de Haas oscillations (SdHO) and in the Hall resistance for different sample geometries. We observe for each sample geometry a strong negative magnetoresistance around zero magnetic field which consists of a peak around zero magnetic field and of a huge magnet...

We present a calibrated bulk mobility model for 4H-SiC. Hall measurements are performed on 4H-SiC samples to determine the mobility/resistivity in temperature range of 200-500K. observe that dependence resistivity cannot be predicted by popular models available within TCAD tools. A careful investigation reveals these need revised and replaced comprehensive can describe impurity scattering effec...

Shubnikov-de Haas oscillations in selectively doped GaAs single quantum wells with AlAs/GaAs superlattice barriers has been studied at temperature T=4.2 K magnetic fields B<1 T. High-mobility heterostructures thin spacer had grown by molecular-beam epitaxy on (001) substrates. The mobilities of two-dimensional electron gas measured two crystallographic directions [110] and differ from ea...

Progress in graphene sample quality starts to disclose rich physics related to Coulomb interactions as well as interaction induced lifting of symmetries associated with the spin and pseudospin degrees of freedom. A key requirement to observe these fragile states in transport has so far been the fabrication of better quality samples. This has been accomplished by placing graphene on BN, or by su...

Abstract In this article, we report the observation of extremely large non-saturating linear magnetoresistance (MR) in antimony (Sb) crystal. An 43 000% at 2 K and unsaturating MR ?70% room temperature is observed magnetic field 9 T. Hall measurements reveal a very high mobility ?3.8 × 10 4 cm V s ?1 charge carriers strong dependence carrier concentration mobility. The respective scaling crosso...