The authors report a 0.7V Manchester carry look-ahead circuit using partially depleted (PD) SOI CMOS dynamic threshold (DTMOS) techniques for low-voltage CMOS VLSI systems. Using an asymmetrical dynamic threshold pass-transistor technique with the PD-SOI DTMOS dynamic logic circuit, this 0.7V PD-SOI DTMOS Manchester carry look-ahead circuit has an improvement of 30% in propagation delay time co...

We present a silicon-on-insulator (SOI) pass-transistor logic (PTL) gate with an active body bias control circuit and compare the proposed PTL gate with other types of PTL gates with different body bias circuits in two different 0.13μm SOI CMOS technologies. The experimental results show that the proposed SOI PTL gate using the body bias controlled technique is superior in terms of performance ...

This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolati...

SOI technology has received high attention for the future high density DRAM applications. The two major requirements in any DRAM technology are long retention time and high charging efficiency. This paper discusses the disadvantages of using bulk silicon and Partially Depleted SOI devices in these terms. It is shown that a DRAM cell built with fully depleted SOI MOSFETs can store data for a lon...

VLSI technology is being driven to giga-scale levels of integration with IC minimum feature dimensions approaching atomic scales. System-level integration is now pursued as critical in major commercial applications including wireless communication, computing, and multimedia. On-chip signal integrity, noise, and electromagnetic compliance (EMC) are becoming “showstoppers” in addition to escalati...

[1] Time series for the Southern Oscillation Index (SOI) and global tropospheric temperature anomalies (GTTA) are compared for the 1958 2008 period. GTTA are represented by data from satellite microwave sensing units (MSU) for the period 1980–2008 and from radiosondes (RATPAC) for 1958–2008. After the removal from the data set of short periods of temperature perturbation that relate to near-equ...

We have investigated the electrical activation of implanted boron in silicon-on-insulator (SOI) material using Hall effect, four-point probe, and secondary ion mass spectrometry. Boron was implanted at energies ranging from 1 keV to 6.5 keV with a dose of 331014 cm−2 into bonded SOI wafers with surface silicon thickness ranging from 300 Å to 1600 Å. In one sample set, furnace anneals at 750 °C ...

The self-consistent density response of an electron system is studied in a two-dimensional 2D lateral superlattice SL with spin-orbit interaction SOI . Under the effect of the lateral periodic potential, the single-electron 2D states are broadened into minibands that are spin split by SOI. In the case of a single fully occupied miniband, we calculate the long-wavelength limit of the polarizatio...