A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single-molecule measurements. Conformationally locked cis diastereomers of bis(sulfide)-anchor-equipped 1,2-disilaacenaphthenes readily form high-conducting junctions in which the two sulfide anchors bind in a bipodal fashion to one gold electrode, providing enou...

The title compound, [GaFe(C(5)H(4))(2)(C(14)H(28)NSi(3))] or [{(2-H(4)C(5)N)Me(2)Si}(Me(3)Si)(2)C]Ga(C(5)H(4))(2)Fe, a galla[1]ferrocenophane, crystallizes with two independent mol-ecules in the asymmetric unit. In these strained sandwich compounds, the angles between the planes of the two π-ligands are 15.4 (2) and 16.4 (2)°, with gallium in a distorted tetrahedral coordination environment.

A detailed introduction to published analogue circuit design techniques using Si and Si/SiGe FET devices for very low power applications is presented in this review. The topics discussed include subthreshold operation in FET devices, micro-currentmirrors and cascode techniques, voltage level-shifting and class-AB operation, the bulk-drive approach, the floating-gate method, micropower transcond...

High-resolution and analytical electron microscopy techniques are used to characterize Ge-implanted hexagonal SiC. After annealing the implanted samples at 1200 degrees C, Ge is found to be located preferentially on interstitial sites. After annealing at 1600 degrees C, small nanocrystals of strained cubic and hexagonal (or faulted cubic) Ge and Ge Si form. Occasionally, hexagonal (or faulted c...

Gallium-doped n-type CdS nanowires (NWs) were successfully synthesized via a thermal evaporation method. The conductivities of the CdS NWs were dramatically improved by nearly nine orders of magnitude after Ga doping, and could be further tuned over a wide range by adjusting the doping level. High-performance metal-insulator-semiconductor field-effect transistors (MISFETs) were constructed base...

A Si/SiO(2)/CuPt structure is formed by depositing a very thin SiO(2) layer between CuPt and P-type Si layers using e-beam evaporation. SEM images show the formation of CuPt nano clusters with an average size of less than 100 nm. This structure shows high sensitivity to applied magnetic fields at 77K and at low and high dc voltages such that magnetic field as low as 6 mT is detected using I-V a...

The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy ...

Ultrafast pulsed laser irradiation is demonstrated to be able to produce surface nano-structuring and simultaneous crystallization of amorphous silicon thin film in one step laser processing. After fs laser irradiation on 80 nm-thick a-Si deposited on Corning 1737 glass substrate, the color change from light yellow to dark brown was observed on the sample surface. AFM images show that the surfa...

The electroluminescence of p-i-n diodes with fully strained Si0.80Ge0.20 /Si(001) is dominated by radiative recombination in an electron–hole plasma. The recombination mechanisms and the band gap renormalization have been studied experimentally and by modeling. In order to minimize the influence of the SiGe/Si interface regions and thus to study the intrinsic behavior of strained SiGe, electrol...