OVERVIEW: In the rapid evolution of VLSI technology toward smaller geometries and increased levels of chip integration, minimum features of 0.18 μm are already being mass produced, and feature sizes of 0.13 μm are being developed. At the same time, 300-mm fab lines are being built, and this is driving a demand for new etching technologies that support smaller tolerances and larger wafer sizes. ...

Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of ...

$\beta$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by low-damage Ga flux etch that enables near-ideal forward operating characteristics independent fin orientation. The reverse breakdown greater than 5.10 MV/cm is demonst...

Fe-Ni alloys, which are kamacite (<10 wt% Ni), taenite (30 ~ 40 wt % Ni), and tetrataenite (ordered Fe 50 Ni 50), are the dominant magnetic minerals in the metamorphic (type 5-6) ordinary chondrites [1], and the carrier of the remanent magnetization is high coercivity tetrataenite [1,2,3]. Metallographic studies reported that there are two types of Fe-Ni grains in the metamor-phic ordinary chon...

We here report on the fabrication of electroplated nickel (Ni) masks for dry etching of sub-micron patterns in lithium niobate (LiNbO3). This process allows obtaining a 350-nm thick Ni mask defining high air filling fraction holey arrays (e.g. openings of 1800 nm in diameter with inter-hole spacing of 300nm, or 330-nm diameter holes spaced by 440-nm). The mask profile is perfectly vertical (ang...

This thesis is devoted to the study of vertical Pourous Anodic Alumina templates (PAA) and the application thereof for nanoorganization and device fabrication. Our principle objective was to develop an anodization method of Al that allows a reproducible fabrication of PAA offering the possibility to create complex porous nanostructures as well as the organization of nanomaterials. The PAA fabri...

Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...

This paper shows that the reflectance in silicon nanowires (SiNWs) can be optimized as a function of the area of silicon substrate where the nanostructure growth. SiNWs were fabricated over four different areas of silicon substrates to study the size effects using electroless etching technique. Three different etching solution concentrations of silver nitrate (AgNO3) and hydroflu...