In this paper we present a new model for calculating the capacitance of MEMS sensor with corrugated diaphragm. In this work the effect of residual stress is considered on deflection of diaphragm and capacitance of sensor. First, a new analytical analyzes have been carried out to derive mathematic expressions for central deflection of corrugated diaphragm and its relationship with residual stres...

Trapped and interfacial charges have significant impact on the performance of organic light-emitting devices (OLEDs). We have studied devices consisting of 20 nm copper phthalocyanine (CuPc) as the buffer and hole-injection layer, 50 nm N,N*di(naphthalene-1-yl)-N,N*-diphenyl-benzidine (NPB) as the hole transport layer, and 65 nm tris(8-hydroxyquinolinato)aluminum (Alq3) as the electron transpor...

Problem statement: As technology scales down, the integration density of transistors increases and most of the power is dissipated as leakage. Leakage power reduction is achieved in Static Random Access Memory (SRAM) cells by increasing the source voltage (source biasing) of the SRAM array. Another promising issue in nanoscaled devices is the process parameter variations. Due to these variation...

Infrared detectors can be used for a variety of applications such as: using in fiber-optic communications. Conventional technology for IR detectors is using p-i-n structure based on GaAs compound. This paper reports on the design and modeling of an IR detector using a p-i-n GaAs structure. Comsol software is used to simulate the model and the detector is discussed for terminal current, dopant p...

In present work two new designs for single bit full adders have been presented using three transistors XOR gates. Adder having twelve transistors shows power consumption of 1274μW with maximum output delay of 0.2049ns. Power consumption and maximum output delay shows variation [1274 141.77] μW & [0.2049 – 0.4167] ns with varying supply voltage from [3.3 1.8] V. Further, reverse body bias techni...

The capacitance between a single sensor strip and the backplane Csb=1.5 pF, bias resistor from the strip implant to the bias rail Rb=1.4 M, decoupling capacitance between the implant and Al readout strip Cdec=120 pF. Two sensors connected to a hybrid have an external capacitance between their backplanes and the ground Cbp=50 nF and a series resistor between this capacitance and the voltage sou...

We are developing Frequency Domain Multiplexing (FDM) for the read-out of TES imaging microcalorimeter arrays for future X-ray missions like IXO. In the FDM configuration the TES is AC voltage biased at a well defined frequencies (between 0.3 to 10MHz) and acts as an AM modulating element. In this paper we will present a full comparison of the performance of a TES microcalorimeter under DC bias...

We have studied optical, chemical and structural properties of Zirconium Nitride thin films as reflecting back contact in solar cell application by reactive sputtering method with different applied bias voltage. The properties of back contact reflector are higher reflection at longer wavelength, resistivity, chemical stability and barrier properties for diffusion of impurities etc., Here, ZrN t...