A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7–20 nm wide, 40–100 nm high and centimeters long. All dimensions are easily adjustable by varying the oxidation time, the wet etching time and the mask geometry, respectively...

We have employed attenuated total reflection Fourier transforms infrared spectroscopy sATR-FTIRSd to monitor the profile evolution of patterned mesoporous, low-dielectric-constant SiO2 films in situ and in real time during plasma etching. A stack of patterned photoresist, anti-reflective coating, and mesoporous SiO2 is etched in an inductively coupled plasma reactor, using CHF3 and Ar. During e...

OBJECTIVES The aim of this study was to evaluate the (1) bond strength of a etch-and-rinse and self-etching adhesive systems to cavosurface enamel, (2) influence of the previous acid etching with phosphoric acid 35% to the self-etching adhesive application on bond strength values, and (3) analysis of the cavosurface enamel morphology submitted to different types of conditioning, with the use of...

in this paper, we have studied the electrical properties of the randomly distributed metallic (co and fe) nano/ micro wires on silicon substrate. deposition was carried out potentiostatically into the pores of the track-etch polycarbonate membrane spin coated onto the si substrate. spin coated films were irradiated with 150mev ni (+11) ions at a fluence of 8e7 ions/cm2, followed by uv irradiati...

PURPOSE Successful bonding of resins to teeth affected by amelogenesis imperfecta (AI) may be highly dependent on how the enamel responds to acid etching. The aim of this study was to determine, using scanning electron microscopy (SEM), the types of etching pattern achieved with 37% phosphoric acid on dental enamel of 5 clinical variants of AI, namely, pitted hypoplastic, smooth hypoplastic, X-...

Real-time, in-situ control of reactive ion etching is shown to reduce loading disturbance in an Applied 8300 reactive ion etch system. The etch process vehicle is CF4 etching of polysilicon. A real-time, multivariable feedback control strategy where key plasma parameters are fed back has been developed. This strategy is experimentally compared with standard industry practice and is shown to red...

A Similarity Ratio Analysis (SRA) method is proposed for early-stage Fault Detection (FD) in plasma etching processes using real-time Optical Emission Spectrometer (OES) data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and ...

A new fabrication technique is employed to convert a metallic foil into a porous structure with an array of micron size pores. The motivation stems from the need to develop a more efficient and controllable gas diffusion medium for fuel cell applications. The influence of mask shape, mask width and etching time was investigated experimentally. A correlation to predict trench width with etching ...