نتایج جستجو برای: go optical band gap

تعداد نتایج: 586818  

Journal: :Microelectronics Journal 2009
L. L. Li W. Xu Z. Zeng A. R. Wright Chao Zhang J. Zhang Y. L. Shi T. C. Lu

We demonstrate theoretically that it is possible to realize terahertz (THz) fundamental band-gap between the electron mini-band in the InAs layer and the heavy-hole mini-band in the GaSb layer in InAs/GaSb based type II superlattices (SLs). The THz band-gap can be tuned by varying the sample growth parameters such as the well widths of the InAs and/or GaSb layers. The presence of such band-gap ...

2009
Nidhi Renu Gupta Tanu Sharma Sanjeev Aggarwal S Kumar

The samples of CR-39 polymer (TASTRAK, Bristol, England) were annealled thermally at various temperatures ranging from 100oC to 180oC for 1 hour, in air. FTIR spectroscopy reveals the structural degradation of CR-39 polymer due to thermal annealing above its glass transition temperature. Optical band gap of pristine and thermally annealed samples has been determined using UV-Visible absorption ...

B. Natarajan N. Jeyakumaran N. Prithivikumaran, V. Lakshmipriya

ZnO thin films with preferred orientation along the (002) plane were prepared onto the glass substrates by the sol-gel spin coating method for different post- annealing temperatures. The XRD study confirms that the thin films grown by this method have good crystalline hexagonal wurtzite structure. The optical band gap of the samples was determined from UV-visible spectra. It is found that the s...

Journal: :international journal of nano dimension 0
monir kamalian department of physics, science and research branch, islamic azad university, tehran, 1477893855, iran.سازمان اصلی تایید شده: دانشگاه آزاد اسلامی علوم و تحقیقات (islamic azad university science and research branch)سازمان های دیگر: nano-optoelectronics lab, sheykh bahaee research complex, science and research branch, islamic azad university, tehran, iran afshin abbasi department of chemistry, university of qom, qom, 3716146611, iran.سازمان اصلی تایید شده: دانشگاه قم (qom university)سازمان های دیگر: nano-optoelectronics lab, sheykh bahaee research complex, science and research branch, islamic azad university, tehran, iran yousef seyed jalili department of physics, science and research branch, islamic azad university, tehran, 1477893855, iran.سازمان اصلی تایید شده: دانشگاه آزاد اسلامی علوم و تحقیقات (islamic azad university science and research branch)

in this study we investigate the effect of atoms such as b, n, ge and sn on the optical and the electrical properties of capped (5, 0) zigzag carbon nanotube, using dft calculation method. these elements were attached to the one end of the carbon nanotube. we considered four different structure designs as possible candidates for a p-n junction device. the electrical properties of these structur...

2017
Byoung Ki Choi Minu Kim Kwang-Hwan Jung Jwasoon Kim Kyu-Sang Yu Young Jun Chang

We report on a temperature-dependent band gap property of epitaxial MoSe2 ultrathin films. We prepare uniform MoSe2 films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-high vacuum showed temperature-dependent optical spectra between room temperature to 850 °C. We observe...

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In this research, with use of copper chloride, indium chloride, Thiourea (source of sulfur) and deionized  water as solvent, using hydrothermal method at 180 ° C and at time of 4, 6, 8, 12, 14, 16, 18 and 20 hours, the composition of CuInS2 nanoparticles was synthesized by Stoichiometric ratio of (1: 1: 2), and in the next step, this compound (CuInS2 ( with cobalt additive at 180 ° C and at tim...

2008
V. A. Tolmachev T. S. Perova J. Ruttle E. V. Khokhlova

The design of one-dimensional photonic crystals and the analysis of their optical properties have been performed using band diagram and forbidden gap map methods. It has been shown that the latter method is more useful for practical applications since i it can be applied for any number of periods and ii it is more suitable for the selection of a filling fraction in a wide range of values using ...

Journal: :The journal of physical chemistry letters 2016
Lingrui Wang Kai Wang Guanjun Xiao Qiaoshi Zeng Bo Zou

Organometal halide perovskites are promising materials for optoelectronic devices. Further development of these devices requires a deep understanding of their fundamental structure-property relationships. The effect of pressure on the structural evolution and band gap shifts of methylammonium lead chloride (MAPbCl3) was investigated systematically. Synchrotron X-ray diffraction and Raman experi...

Journal: :Physical review letters 2009
Kin Fai Mak Chun Hung Lui Jie Shan Tony F Heinz

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte top gate for a photon energy range of 0.2-0.7 eV. We see the emergence of new transitions as a band gap opens. A band gap approaching 200 meV is observed whe...

The research in new organic π-conjugated molecules with specific properties has become one of the most interesting topics in fields of materials chemistry. These materials are promising for optoelectronic device technology such as solar cells. On the other hand, the use of low band gap materials is a viable method for better harvesting of the solar spectrum and increasing its efficiency. The Co...

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