نتایج جستجو برای: hall mobility
تعداد نتایج: 163617 فیلتر نتایج به سال:
Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfoliated onto SiO2. Without dielectric engineering and beyond a T-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm(2)/Vs at T = 300 K. The hole Hall mobility reaches a maximum value of 650 cm(2)/Vs as T is...
Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS I...
Two sets of silicon wafers were implanted with 60 keV arsenic ions at a dose of 5x1015 cm-2, using an Applied Materials SWIFT implanter. The first batch consisted of five silicon preamorphised wafers, whilst the second batch was implanted under the same conditions into <100> single crystal wafers. The tilt angle was varied over the range 0o 45o. After implantation the samples were cut into smal...
Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains chal...
The birthday of the quantum Hall effect (QHE) can be fixed very accurately. It was the night of the 4th to the 5th of February 1980 at around 2 a.m. during an experiment at the High Magnetic Field Laboratory in Grenoble. The research topic included the characterization of the electronic transport of silicon field effect transistors. How can one improve the mobility of these devices? Which scatt...
Fundamental studies of intrinsic charge transport properties of organic semiconductors are often hindered by charge traps associated with static disorder present even in optimized single-crystal devices. Here, we report a method of surface functionalization using an inert non-conjugated polymer, perfluoropolyether (PFPE), deposited at the surface of organic molecular crystals, which results in ...
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