A novel structure of double-gate (DG) NMOSFET, which is formed by a strained silicon (Si) channel by using Si/Si1−xGex/Si, is proposed for the improvement of device characteristics. For analyzing the nano-scale DG MOSFET, a two-dimensional quantum-mechanical (QM) approach for solving the coupled Poisson-Schrödinger equations is reported. The advantages of a strained Si channel of DG MOSFET are ...

In this paper we present a methodology for the integrated atomistic process and device simulation of decananometre MOSFETs. The atomistic process simulations were carried out using the kinetic Monte Carlo process simulator DADOS, which is now integrated into the Synopsys 3D process and device simulation suite Taurus. The device simulations were performed using the Glasgow 3D statistical atomist...

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition, detail device physics based on 2D and ev...

This special section contains about 27 papers, which cover the fields of MOSFET technology, Emerging technology, III-V semiconductor technology, Nanoscale device technology Memory technology and Circuit technology. Recent years, innovations of electronic devices are strongly required for the various electronics fields such as information processing, communications, sensor electronics and power ...

New original circuit model for the power device based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a threedimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit simulations with distributed properties and three-dimensional thermal equivalent network is used for simulation of multipulse unclamped indu...

The scaling of silicon-based MOSFET technology beyond the 22 nm node is challenging. Further progress requires new materials, innovative structures, and even novel device concepts. All the emergent channel materials need perfect top-gate dielectric stacks in order to sustain their potential device performance. ALD high-k as a common gate stack solution finds itself very successfully integrated ...

Components of drain leakage currents in the off-state of MOSFET are gate-induced drain-leakage (GIDL) and drain junction reverse currents. Device degradation phenomenon and mechanism by GIDL have been well known, but those by drain junction reverse current (IDJR). have not. In this paper, device degradation mechanisms by drain junction reverse current in the off-state were studied through I-V c...

In this paper, an analytical model for a vertical double implanted metal-oxide semiconductor (DIMOS) transistor structure in 4H-Silicon Carbide (SiC) is presented. Simulation for transport characteristics of the SiC MOSFET with the exact device geometry is carried out using the commercial device simulator MEDICI. A rigorous experimental testing and characterization is done on a 4H-SiC DIMOS tra...

As a wide bandgap power electronics device, the SiC MOSFET has lot of advantages over traditional Si IGBT. Replacing IGBT with in existing converter is an effective means to improve performance and promote upgrading converter. Generally, order make full use its MOSFET, circuit cannot be simply replaced by but main driver need redesigned because oscillation problem cross-talk caused parasitic pa...

Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility up to 300 cm2V−1s−1, which is considered promising candidate for next-generation power devices. However, its low thermal conductivity reckoned be severe issue in the management high-power The epitaxial integration thin films on silicon carbide (SiC) substrates possible solution tack...