We have performed density functional theory investigations on the adsorption properties of ammonia molecule on the undoped and N-doped TiO2 anatase nanoparticles. We have geometrically optimized the constructed undoped and N-doped nanoparticles in order to fully understand the adsorption behaviors of ammonia molecule. For TiO2 anatase nanoparticles, the binding site is preferentially located on...

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We performed a density functional theory investigation on the structural and electronic properties of pristine and nitrogen-doped TiO2/Graphene oxide nanocomposites as the adsorbents for the removal of toxic NO molecules in the environment. We presented the most stable adsorption configurations and examined the interaction of NO molecule with these doped and undoped nanocomposites. It turns out...

We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes pen...

We have established that a design strategy for drain and gate connected field plates should be adopted while keeping in mind the interplay of various charge sources across AlGaN/GaN epi-stack, which governs electric distribution HEMT. The investigations this work are carried out Schottky, MIS p-GaN stacks accounting possible GaN buffer types (Fe-doped C-doped). role was found to different Fe-do...

Using the first-principles band-structure method and the special quasirandom structures approach, the authors have investigated the band structure of random AlxInyGa1−x−yN quaternary alloys. They show that the wave functions of the band edge states are more localized on the InN sites. Consequently, the photoluminescence transition intensity in the alloy is higher than that in GaN. The valence b...

Yellow luminescence (YL) analysis was investigated as a possible route for the screening of as-grown wafers for kink effect in Fe-doped AlGaN/GaN HEMTs, i.e., prior to their final fabrication. This is because the kink effect in the output characteristics of GaN HEMTs has previously been suggested to originate from YL-related defect states. In contrast to earlier works, no direct correlation bet...