This paper provides the details of a study on effects electron irradiation two Low Noise Amplifiers (LNA), Gallium-Arsenide (GaAs) pseudomorphic high mobility transistor (pHEMT) based and Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that properties GaAs SiGe HBT's are very tolerant gamma, neutron, proton without additional radiation hardeni...

High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 μm production AlGaAs/GaAs HEMT process technology is reported. Operating at an accelerated life test conditions of Vds=4.2V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at threetemperatures (Ta=255 C, Ta=270 C, and Ta=285 C) in air ambient. The activation energy (Ea) is as high as 1.7 eV, achie...

The results of our research on the electro-optical control of MMICs are shown in this paper. Two different devices have been investigated: a GaAs chip monolithic amplifier at S band, and an AlGaAs chip MMIC voltage controlled oscillator at Ku. The possibilities of optical control of the amplifier are evidenced as follows: if the amplifier operates with the same biasing, the gain can be opticall...

In this work, we propose a novel approach called “Normalized Gain Function (NGF) method” to design low/medium power single stage ultra wide band microwave amplifiers based on linear S parameters of the active device. Normalized Gain Function TNGF is defined as the ratio of T and |S21|, desired shape or frequency response of the gain function of the amplifier to be designed and the shape of the ...

This paper describes the design and evaluation of a Single Pole Double Throw (SPDT) switch IC covering DC to 20GHz. Two SPDTs are realised on each die to give a dual channel part for use in systems where accurate gain and phase matching between channels is vital. The switch was fabricated on Triquint Semiconductor Texas’ 0.25μm PHEMT process and has a measured insertion loss of less than 1dB to...

Accurate modeling of nonlinear microwave devices is critical for reliable design of microwave circuit and system. In this paper, a more general neuro-space mapping (Neuro-SM) method is proposed to fulfill the needs of the increased modeling complexity. The proposed technique retains the capability of the existing dynamic Neuro-SM in modifying the dynamic voltage relationship between the coarse ...

Wide frequency bandwidth has been internationally allocated for unlicensed operation around the oxygen absorption frequency at 60 GHz. A power amplifier and a low noise amplifier are presented as building blocks for a T/R-unit at this frequency. The fabrication technology was a commercially available 0.15 μm gallium arsenide (GaAs) process featuring pseudomorphic high electron mobility transist...

The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3 10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15 μm G...

in this paper a wideband single stage pseudomorphic high electron mobility transistor (PHMET) amplifier has been designed at 5.8 GHz, the input and output matching circuits have a pi form.Noise cancelling principle and sensitivity analysis are performed .Simulation results have been compared with their correspondence in [10] give 2.71 dB improvement in amplifier gain at the same noise figure (N...