Samarium-doped ZnO hierarchical micro/nanospheres (Sm/ZnO) were synthesized via a facile and surfactant-free chemical solution route. The obtained products were characterized by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX), UV–visible diffuse reflectance spectroscopy (UV-vis DRS) and photolumi...

Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photol...

In this study graphene oxide (GO) was synthesized by using Hummer’s method. Low dimension graphene quantum dot nanoparticles (GQDs) were synthesized using pulse laser irradiation. Fourier Transform-Infrared Spectroscopy (FTIR), Ultraviolet-Visible (UV-Vis) spectroscopy and photoluminescence (PL) analysis were applied to study the GQDs characteristic. Scanning electron microscopy illustrated the...

Well-aligned Cu-doped ZnO nanorods were successfully synthesized on polyethylene terephthalate (PET) substrate using chemical bath deposition method. The structural and optical properties of Cu-doped ZnO nanorods were investigated using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) spectroscopy...

InAs layers with thickness of 1 monolayer (d-layers) were grown by MBE embedded in GaAs barriers in the direction [1 0 0]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the d-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs d-layers embedded in between 60 nmthick GaAs barriers...

AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity ~PR! and photoluminescence ~PL! spectroscopy. Under a critical AlN film thickness, the luminescence from the GaN channel layer near the interface proves to be excitonic. No luminescence related to the recombination of the two-dimensional electron gas ~2DEG! is observed, in spite o...

Temperature-dependent photoluminescence (PL), contactless electrore ectance (CER) and surface photovoltage spectroscopy (SPS) characterizations of two Zn0:95 xBe0:05MnxSe mixed crystals with Mn contents x = 0.05 and 0.20 grown by using the modi ed high-pressure Bridgman method has been carried out in the temperature range of 15 { 300 K. A typical PL spectrum at low temperature consists of a fre...

The effect of doping by boron on optical properties of multilayers containing Si-NCs were studied by means of photoluminescence (PL), time-resolved PL, photoluminescence excitation (PLE), transmission and reflection measurements. It was found that PL decay is strongly non-single exponential and can be described by means of Laplace transform of log-normal decay rates distribution. It was also pr...

The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs and GaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied in detail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL peak energy as well as the full width at half maximum (FWHM), as a function of temperature, prese...

In a series of (Ca2-x/2-yEuy□x/2)(Si1-xPx)O₄ (x = 0.06, 0.02 ≤ y ≤0.5), various color-emitting phosphors were successfully synthesized by a solid-state reaction. These phosphors were characterized by photoluminescence (PL) spectroscopy, X-ray powder diffractometry, transmission electron microscopy, and X-ray absorption fine structure spectroscopy. We evaluated the effect of heat treatment on PL...