Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs" (1995). Faculty Publications from the Department of Electrical and Computer Engineering. 73. In situ real time spectroscopic ellipsometry measurements were made during electron cyclotron resonance plasma etching of radio frequency biased GaAs and AlGaAs samples. Gas mixtures used were CH 4 ...

In plasma etching processes it is critical to know when the film being etched has cleared to the underlying film, i.e. to detect endpoint, in order to achieve the desired device performance in the resulting integrated circuit. The most highly utilized sensor technology for determining endpoint has historically been optical emission spectroscopy (OES), because it is both non-invasive and highly ...

We report on a process to form micron-scale inverse cones in crystalline silicon without any masking steps using selective, low temperature (<175°C) plasma process. The selectivity of the originates from use H 2 that preferentially etches away amorphous cones, formed as result epitaxial breakdown, leaving surrounding material behind. Efficient etching is realized by pre-coating reactor walls wi...

We present three-dimensional simulation techniques for plasma etching processes. Models based on Langmuir-type adsorption and on ballistic particle transport at feature scale can be efficiently solved in three dimensions. Surface coverages are self-consistently calculated. The local sputter rates of ions and the fluxes of neutrals are computed using modern ray tracing algorithms. In this way an...

Materials and Methods Nanofluidic chips Nanofluidic chips were fabricated from a silicon wafer with 2 μm thermal oxide in cleanroom facilities at Chalmers University of Technology. Nanochannels were created by electron-beam lithography (JBX-9300FS/JEOL Ltd) and reactive ion etching (Plasmalab 100 ICP180/Oxford Plasma Technology). Microchannels were made by optical lithography (MA 6/Suss MicroTe...

We present a simulation of the Bosch process using the feature-scale modeling software FPS3D. FPS3D is a generic simulator that can be applied to any set of materials, plasmas, reactive gases, and reactions for both 2D and 3D simulations of etching and deposition. FPS3D can simulate multi-time-step processes for which the fluxes, species, reactions, ion energies, angular distributions, and othe...

Consider the problem of selecting the member of a parametrized family of curves that best matches a given curve. This is a key step in determining proper values for adjustable parameters in low-order plasma etching and deposition models. Level set methods o er several attractive features for treating such problems. This paper presents a parameter estimation scheme that exploits the level set fo...

150

It is shown that in the self-forming mode plasma etching process of amorphous silicon structures (α-Si)/SiO 2 /Si and (α-Si)/Pt/SiO chlorine-containing (Cl /Ar), it possible to obtain a multicolored surface from nanoconus nanowire α-Si. The mechanism formation such during chemical discussed. reflection spectra colored films are given. bright colors caused by resonant light layers α-Si with subl...

Real-time, in-situ control of reactive ion etching is shown to reduce loading disturbance in an Applied 8300 reactive ion etch system. The etch process vehicle is CF4 etching of polysilicon. A real-time, multivariable feedback control strategy where key plasma parameters are fed back has been developed. This strategy is experimentally compared with standard industry practice and is shown to red...