Power density in active devices is increasing according to the demands of transistor users. Applications in commercial wireless, avionics, broadcast, industrial, and medical systems are pushing the envelope for solid-state power, with growing requirements for higher output power levels from fewer output-stage devices. At Freescale Semiconductor, supplying high-performance radio frequency (RF) a...

Recent advances in development of semiconductor devices lead to more and more complex device structures. This concerns device geometry as well as tne combination of different materials. Due to the rapid reduction of device geometries, the models describing the device physics increase in complexity. 10 gain additional insight into the performance of devices under realistic dynamic boundary condi...

In this presented paper, to accomplish semiconductor device synthesis for TCAD application, the Parallel Genetic Algorithm is applied as the core searching algorithm for “acceptability region” of device designables, which satisfy the designed device performance. The results of some experiments on FIBMOS are shown, which indicate the Parallel Genetic Algorithm is an efficient and fast searching ...

We have analyzed the effects of immersion gold (i-Au) and electroless nickel (e-Ni) thickness, on the reliability of a semiconductor device which has special constraints on the absolute Ni and Au layer thickness. The electrochemical reactions involved in the deposition of immersion Au over Ni involves a substitution process by which Ni atoms are replaced by Au atoms. We demonstrate that in some...

Image data management in the semiconductor manufacturing environment is becoming more problematic as the size of silicon wafers continues to increase, while the dimension of critical features continues to shrink. Fabricators rely on a growing host of image-generating inspection tools to monitor complex device manufacturing processes. These inspection tools include optical and laser scattering m...

Novel ultrafast semiconductor lasers Ursula Keller ETH Zürich SESAM modelocked VECSELs and MIXSELs are attractive semiconductor laser sources that deliver ultrashort laser pulses with picosecond and femtosecond pulse durations in combination with watt-level average output power levels in the gigahertz repetition rate range. The excellent beam quality and low-noise performance makes them highly ...

Noise (a spontaneous fluctuation in current or in voltage) is generated in all semiconductor devices. The intensity of these fluctuations depends on device type, its manufacturing process, and operating conditions. The resulted noise, as a superposition of different noise sources, is defined as an inherent noise. The equivalent noise models (containing all noise sources) are created for a parti...

Preparation and structural analysis of highly ordered single crystalline wires of a diketopyrrolopyrrole (DPP) molecular semiconductor grown through a solution process are reported, and the static/dynamic electrical response of an organic electronic device using the DPP semiconductor has been analyzed.

Semiconductor manufacturing process variations are worsening with continued reduction in transistor feature sizes. However, technology scaling is the engine driving the semiconductor industry and must continue. When variations worsen to the point that they can no longer be addressed solely at the device and circuit levels, the next logical step is to develop variation-tolerant

We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance en...