–We have investigated undoped hydrogenated amorphous silicon (a-Si:H) p-type crystalline silicon (c-Si) structures with and without a microcrystalline silicon (c-Si) buffer layer as a potential for hetero-junction (HJ) solar cell. Hydrogenated amorphous silicon and microcrystalline silicon film have been grown by inductively coupled plasma chemical vapour deposition (ICP-CVD). Solid phase crys...

Modification of the electrical transport of a random network of silicon nanowires assembled on n‐ silicon support, after silicon nanowires functionalization by chlorination/alkylation procedure , is here described and discussed. We show that the organic functionalities induce charge transfer at single SiNW and produce doping‐like effect that is kept in the rando...

A method for fabricating silicon quantum wires with SiO2 boundaries is presented. It is accomplished by first growing Si/SiGe/Si heterostructure on silicon substrate with very low-pressure chemical vapor deposition, followed by lithography and reactive ion etching to form trench structures. Finally, the selective chemical etching of SiGe over silicon and subsequent thermal oxidation are carried...

A new method for growing silicon nanowires was presented. They were grown in an aqueous solution at a temperature of 85 oC under atmospheric pressure by using sodium methylsiliconate as a water‐soluble silicon precursor. The structure, morphology, and composition of the as‐grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and en...

Nano cavities based on silicon and indium phosphide materials have been comparedin this study, considering field intensity enhancement factor. The results of FDTD based simulations declare that the Si nano-cavity improves confined optical field about 7.7 times higher than the InP based nano-cavity. The introduced dielectric nano-cavities support resonance wavelength at about λ=1.55 μm.

Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Me...

The electrodeposition at room temperature of silicon and germanium nanowires from the airand water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P1,4) containing SiCl4 as Si source or GeCl4 as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germ...

Integration of light sources on a Si chip is one of milestone to establish new paradigm of LSI systems, so-called “silicon photonics.” In recent years remarkable progress has been made in the Si wire waveguide technologies for optical interconnection on a Si chip. In this paper, several Er embedded materials based on silicon are surveyed from the standpoint of application to the light emission ...

Despite considerable work on other trace elements, the incorporation of dissolved silicon from cave waters into speleothems has not been previously investigated. In this study, the controls on dissolved Si in cave waters and on adsorbed Si in resulting speleothems are therefore investigated. Bedrock (dolomite), soil water, dripping water, and cave carbonates were retrieved from Heshang Cave sit...