Source-drain follower has been designed and implemented for monolithically integrated biosensor array. The circuit acts as a voltage follower, in which a sensing transistor is operated at fixed gatesource and gate-drain voltages. It operates at 10 nW power dissipation. The wide-swing cascode configurations are investigated in constant and non-constant biasing methods. The constant biased cascod...

Memory has been facing several problems in which the leakage current is the most severe. Many techniques have been proposed to withstand leakage control such as power gating and ground gating. In this paper a new 8T SRAM cell, which adopts a single bit line scheme has been proposed to limit the leakage current as well as to gain high hold static noise margin. The proposed cell with low threshol...

A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both p- and n-regimes crucial applying MoTe2-based devices as electronic because their native states are unipolar. In ...

The threshold voltage instability in p-GaN gate high electron mobility transistors (HEMTs) has been brought into evidence recent years. It can lead to reliability issues switching applications, and it be followed by other degradation mechanisms. In this paper, a Vth measurement protocol established for SiC MOSFETs is applied GaN HEMTs: the triple sense protocol, which uses bias precondition tra...

Digital sub-threshold circuits are significant for ultra-low power (ULP) applications. Operating circuits at ultra-low voltage levels leads to the less power per operation. An optimized method is separating the logic blocks based on performance requirement and utilizing multiple-supply voltage (VDD) for each blocks. In order to prevent an enormous static current in these multi-VDD circuits, vol...