The U-slot micro-strip patch antennas were originally developed for bandwidth broadening applications. This study presents a transmission line feed to modify the U-slot stacked rectangular micro-strip patch antenna for Ultra-Wide Band (UWB) communications. The modified antenna has a U-cut loaded with parallel slits and corner slots and is printed on a dielectric substrate of FR4 with relative p...

this paper investigates the multi-band ofdm (mb-ofdm) based physical (phy) layer proposal for ieee 802.15.3a working group on short-range high data-rate ultra-wide-band (uwb) communications. an overview of the mb-ofdm phy layer architecture with its various parameters is presented and the optimal choice of critical parameters is discussed. next, we derive the theoretical un-coded bit error rate...

this paper presents an e-ring shaped printed monopole antenna for uwb applications with dual notched bands performance. in order to generate single frequency band notch function, we applied a u-ring shaped monopole antenna, and by inserting a rectangular ring in the centre of it an e-ring shaped radiating patch created and a dual band-notch function can be achieved. the measured bandwidth of th...

A theoretical model for tunneling spectroscopy employing tight-binding band structure, dx2−y2 gap symmetry, group velocity, and tunneling directionality is studied. This is done to investigate if the model can exhibit the same wide range of characteristics observed in tunneling experiments on high-Tc superconductors. A band structure specific to optimallydoped Bi2Sr2CaCu2O8 (BSCCO) is used to c...

A series of p- and n-GaAs-S-C(n)H(2n+1) || Hg junctions are prepared, and the electronic transport through them is measured. From current-voltage measurements, we find that, for n-GaAs, transport occurs by both thermionic emission and tunneling, with the former dominating at low forward bias and the latter dominating at higher forward bias. For p-GaAs, tunneling dominates at all bias voltages. ...

The breakdown of an overvoltage protection structure is analyzed in the temperature range from 298 to 523 K. The avalanche generation rates are modeled as a function of the carrier and lattice temperature. The generation rates are proportional to the carrier concentration. Careful attention is given to the pre-breakdown regime and to the breakdown process. The importance of various generation p...

A heteroquantum-dots (HQD) model for hydrogenated nanocrystalline silicon films (nc-Si:H) is proposed. The main features of our model are as follows. (i) the nanocrystalline grains and the amorphous counterparts in which they are embedded have very different band gap and band structures. As a result, they form heterojunctionlike structures in the interface regions, where the band offset effects...

We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters lea...