Ni doped ZnO (Zn1 xNixO) thin films were grown on quartz substrates via magnetron sputtering deposition process with the Ni concentrations of 5, 10 and 20 at.% in the films. The effects of Ni doping level and post annealing on the structural and magnetic properties of Zn1 xNixO films were investigated by means of X-ray diffraction (XRD), alternating gradient magnetometer (AGM) and photoluminesc...

Abstract Pure ZnO and Cr-doped nanoparticles have been synthesized via a facile chemical co-precipitation route their structural, thermal characteristics were discussed systematically. In the experimental producer, doping concentration has varied range, 0.05–0.1 M, while calcined at 600 °C. The influence of Cr-doping on physical was investigated addressed. As-prepared samples analyzed XRD, FTIR...

in this study un-doped and eu-doped zno nanorods and microrads were fabricated by chemical vapor deposition (cvd) method. the effects of annealing, synthesis temperature and structure on structural and photoluminescence properties of eu-doped zno samples were studied in detail. prepared samples were characterized using x-ray diffraction (xrd), scanning electron microscopy (sem), particle size a...

ZnO is a promising material suitable for variety of novel electronic applications including sensors, transistors, and solar cells. Intrinsic ZnO film has inferiority in terms of electronic properties, which has prompted researches and investigations on doped ZnO films in order to improve its electronic properties. In this work, aluminum (Al) doped ZnO (AZO) with various concentrations and undop...

Transparent anodes are indispensable components for optoelectronic devices. Two-dimensional (2D) materials are attracting increasing research interest due to their unique properties and promising applications. In order to design novel transparent anodes, we investigated the electronic, optical, and electrical properties of 2D ZnO monolayers doped with Al, Ga, and In using the first-principles c...

Metal oxide charge transport layers are widely used to promote the interfacial charge transport of organic optoelectronics. Nevertheless, frequently used wide-bandgap metal oxides with low electrical conductivities reveal inherent limitations in the charge transport enhancement. We present the remarkable electro-conductivity enhancement of solution processable ZnO charge transport layers upon d...

The incorporation of foreign elements into ZnO nanostructures is of significant interest for tuning the structure and optical and electrical properties in nanoscale optoelectronic devices. In this study, Ga-doped 1-D ZnO nanorods were synthesized using a hydrothermal route, in which the doping content of Ga was varied from 0% to 10%. The pn heterojunction diodes based on the n-type Ga-doped ZnO...

Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [101_0] to infrequent [022_3] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of...

Co (3%)-doped ZnO and Co, Cu (Co = 3% 2 to 4%) dual-doped nanostructures were prepared using chemical co-precipitation route. The structural analysis indicated no alteration in the structure of hexagonal absence secondary/impurity phases induced by Co/Cu addition into ZnO. reduction crystallite size (≈ 25 nm) at 2% is due suppression growth rate dissimilarities between Co2+/Cu2+ Zn2+ ions, enha...