Damage free etching is required for the gate etching process in GaAs IC fabrication. While inductively coupled plasma (ICP) is thought to be the low damage etching technique, the degradation of DC characteristics was observed in our GaAs MESFETs. Threshold voltage shifts and Schottky barrier height is decreased. It was confirmed that the control of the antenna power (i.e. applied power to the u...

Ti6Al4V samples, obtained by selective laser melting (SLM), were subjected to successive treatments: acid etching, chemical oxidation in hydrogen peroxide solution and thermochemical processing. The effect of temperature time etching on the surface roughness, morphology, topography phase composition after treatment was studied. surfaces characterized scanning electron microscopy, energy dispers...

Fundamental physical mechanisms in deposition and etching generate both desired and undesired topographic features. The goal of this chapter is to provide a basic foundation for understanding and modeling their effects on topography profile time-evolution. A common framework for modeling etching and deposition is given along with the terminology used to describe various physical phenomena and e...

Plasma process is a highly selective technique exploiting the individual or mixed function of positive ions, electrons, neutral radicals, and photons produced by low temperature plasmas. For example, dielectric etching is a competitive process among charging, etching and deposition at each of local positions of a geometrical structure exposed to reactive plasmas. Plasma etching is adjacent to t...

A novel low-cost 2D silicon nano-mold fabrication technique was developed based on Cu inclined-deposition and Ar(+) (argon ion) etching. With this technique, sub-100 nm 2D (two dimensional) nano-channels can be etched economically over the whole area of a 4 inch n-type <100> silicon wafer. The fabricating process consists of only 4 steps, UV (Ultraviolet) lithography, inclined Cu deposition, Ar...

Recently, self-etching adhesive system has been introduced to simplify the clinical bonding procedures. It is less acidic compared to the phosphoric acid, thus there is doubt whether this system has enough bond strength to enamel. The purpose of this study was to investigate the influence of additional etching on the adhesion of resin composite to enamel. Ninety extracted bovine permanent anter...

Based on previous theoretical and experimental results on the electrochemical etching of silicon in HF-based aqueous electrolytes, it is shown for the first time that silicon microstructures of various shapes and silicon microsystems of high complexity can be effectively fabricated in any research lab with sub-micrometer accuracy and high aspect ratio values (about 100). This is well beyond any...

The low level doping of a selective emitter by etch back is an easy and low cost process to obtain a better blue response from a solar cell. This work suggests that the contact resistance of the selective emitter can be controlled by wet etching with the commercial acid barrier paste that is commonly applied in screen printing. Wet etching conditions such as acid barrier curing time, etchant co...

Dry etching techniques employing ion beam induced surface reaction and the possibility of highly charged ion beam in dry etching are described, and the preliminary work on dry etching of GaAs using highly charged ion (HCI) is also presented. In usual dry etching, total etch rate is a summation of the physical sputtering rate, the chemical etching rate, and the ion-induced chemical etching rate....

The aim of this study was to evaluate the shear bond strength (SBS) of polycrystalline ceramic brackets (PCB) bonded after bleaching treatment using different composite resins and enamel etching times. A total of 144 bovine incisors were randomly divided into two study groups (n = 72, each) as follows: G1, enamel bleached with 35% hydrogen peroxide, and G2 (control group), enamel unbleached. Af...