Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices they can serve a synaptic device for neuromorphic implementation and one-transistor (1T) achieving high integration. Since the discovery of hafnium–zirconium oxide (HZO) with ferroelectricity (even at thickness several nanometers) that be fabricated by complementary metal–oxide–semiconductor-comp...

Random telegraph signal ~RTS! amplitude has been studied in a submicron n-channel metal oxide semiconductor field effect transistor as a function of gate voltage. To do so, we have employed a complete simulator of metal oxide semiconductor devices where the effect of a single acceptor trap placed in the silicon oxide was taken into account. The dominant role played by the screening of the charg...

An approach to study transport in semiconductors using the Kubo formula is developed and applied to Si metal–oxide–semiconductor field effect transistors ~MOSFETs!. It is known that interface roughness is an important source of scattering in a MOSFET device operating at high sheet charge concentration (;10 cm). However, in spite of its importance, due to the complexity of the problem very simpl...

High mobility III–V semiconductors, along with high-k gate dielectrics, are projected to be key ingredients in future complementary metal–oxide–semiconductor technology. Among these, In0.53Ga0.47As has been intensively studied for their advantages in high electron mobility over their Si-based counterparts. In0.53Ga0.47As metal–oxide–semiconductor field-effect transistors (MOSFETs) have been dem...

We present an inverse modeling technique to determine the two-dimensional ~2D! dopant profile of a metal–oxide–semiconductor field-effect transistor from electrical measurements. In our method, the profile is formulated using two tensor product splines ~TPSs!. This analytical representation is general, compact, and flexible. It simplifies the profile determination problem to the extraction of t...

With atomic systems, optically programmed trapping potentials have led to remarkable progress in quantum optics and quantum information science. Programmable trapping potentials could have a similar impact on studies of semiconductor quasi-particles, particularly excitons. However, engineering such potentials inside a semiconductor heterostructure remains an outstanding challenge and optical te...

The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction. A het...

Two dimensional (2D) materials with a monolayer of atoms represent an ultimate control of material dimension in the vertical direction. Molybdenum sulfide (MoS2) monolayers, with a direct bandgap of 1.8 eV, offer an unprecedented prospect of miniaturizing semiconductor science and technology down to a truly atomic scale. Recent studies have indeed demonstrated the promise of 2D MoS2 in fields i...

In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever incr...