A 100-transistor MESFET grid oscillator has been fabricated that generates an effective radiated power of 660W at 9.8GHz and has a directivity of 18.0dB. This corresponds to a total radiated power of 10.3 w , or 103mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 7.4V and the total drain current for the grid is 6.0A, resulting...

We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO3. As a result of the large dielectric constant of SrTiO3 and t...

Significant progress has been achieved in making larger (2 inch) 4H-SiC substrates with much lower micropipe defect densities. With the recent availability of semi-insulating 4H-SiC substrates, the demonstration of impressive microwave power results have been made possible both in SiC MESFETs and in GaN/AlGaN HEMTs grown on these substrates. SiC MESFETs have achieved RF power densities of 4.6 W...

We studied the pattern transfer fidelity of nanoimprint lithography (NIL) by patterning sub-micron MESFET gates on six-inch wafers. The critical dimensions (CD) of the gate patterns on the mould, imprinted in resist, as well as after oxygen reactive ion etching (RIE) and metal lift-off were measured, separately, using an ultrahigh-resolution scanning electron microscope. Comparison of the measu...

Previous investigations of noise in mutually synchronized coupled-oscillator systems are extended to include the effects of phase noise introduced by externally injected signals. The analysis is developed for arbitrarily coupled arrays and an arbitrary collection of coherent injected signals, and is illustrated with the specific case of linear chains of nearest neighbor coupled oscillators eith...

A hydrodynamical model for electron transport in silicon semiconductors, which is free of any fitting parameters, has been formulated on the basis of the maximum entropy principle. The model considers the energy band to be described by the Kane dispersion relation and includes electron–nonpolar optical phonon and electron–acoustic phonon scattering. The set of balance equations of the model for...

•9 ABSTRACT (Continue on reverie if necestary and identity by Nock number) ) Advanced algorithms for twoand three-dimensional modeling of semiconductor devices have been developed, implemented on parallel computers and tested using several high performance technologies. Computational limitations for semiconductor device analysis have been extended to greater than KJ nodes and speedup factors gr...

Afm&act — We present a novel approach to nonlinear large-signaf FET model parameter extraction for GaAs MESFET devices measured under large-signaf condkions. Powerful nonlinear adjoint-based optimizatio~ which employs the harmonic bafance method as the nonlinear circuit simulation technique, simultaneously processes mrdtibias, yultipower inputs, mnki-fundamental-frequency excitations, and mnfti...

Two-phase dynamic FET !ogic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with p d = 1.7 mW. The prescaler, which contains 166 TDFL gates and 79 static gates, i s shown to op...

A transistor parameter extraction method is presented where the device heating during the measurement is taken into account. The method utilizes an electrothermal transistor model including thermal feedback, as well as a proper model for the heat diffusion from the active region of the transistor. Here a simple but physically justified model for the thermal spreading impedance of the transistor...