In the modern VLSI especially for high speed devices, where the conventional MOSFET technology is reaching its limitations due to various short channel effects and velocity saturation effects etc, hetero-junction FETs have shown great promise for high speed devices. Novel HEMT device using heterojunctions made of and on a substrate is designed and modeled using TCAD software. Highly doped deep ...

The Metal-Ferroelectric-Semiconductor FET (MFSFET) device is structurally similar to a regular MOSFET device except that the gate material is composed of a ferroelectric material (PZT) normally sandwiched between two layers of silicon dioxide. Ferro models the PZT material with a set of four material parameters; the saturation polarization Ps, the remanent polarization Pr, the coercive field Ec...

In this paper, underlap channel dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been proposed, in which the increased effective channel length (Leff) due to underlap channel at both source/drain (S/D) sides reduces the leakage currents, short-channel effects and the parasitic capacitances as compared to overlap channel DSSB SOI MOSFET. Although in strong inversion the voltage drop acro...

This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal loop which generates the on-chip magnetic field. The proposed device designed is much smaller in s...

Abstract For understanding of the device operations and its interaction with the circuit in the nano scale era, the device simulation has been extended to include the quantum transport effects, statistical effects and to be compatible with the circuit simulation environments. To do so, the full Newton scheme has been developed to fully integrate the Poisson equation, transport equation and the ...

In this paper, a power laterally-diffused metal-oxidesemiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is anal...

The drive performance of a new MOSFET structure, the peak device, resulting from recent doping profile optimizations of a 0.25 mm nMOSFET for 1.5 V supply voltage, is investigated. Explanations for the improved performance are given using two-dimensional device simulation. With an analytical transistor model fitted to the two-dimensional device characteristics, the relevant physical effects are...

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...