The key to successfully applying the SiC MOSFET requires an understanding of the device’s unique operating characteristics. In this section, the characteristics of Cree’s 1200V 80mΩ SiC MOSFET (CMF20120D) will be discussed. Comparisons will be made with other similar silicon devices along with application implications. The intention of this comparison is to illustrate the differences in operati...

A correlation between the gated-diode R-G current and the performance degradation of SOI n-channel MOS transistor after F-N stress test has been demonstrated in this paper. Due to increase of interface traps after F-N stress test, the generation-recombination (R-G) current of the gateddiode in the SOI-MOSFET architecture increases while the performance characteristics of MOSFET transistor such ...

The device design of future nanoscale MOSFETs is reviewed. Major challenges in the design of the nanometer MOSFETs and the possible solutions are discussed. In this paper, special emphasis is placed on the combination of new transistor structures that suppress the short channel effect and on back-gate voltage control that suppresses the characteristics variations. Two new device architectures, ...

This paper present an extensive review of homogeneously doped Junctionless Cylindrical Gate All Around (JL-CGAA) MOSFET using numerical simulations to look into deep physical insight of the device. The electrical and analog/RF performance has been investigated. The JL-C-GAA FET is more immune to short channel effect than the devices having p-n junctions. It also offers steeper subthreshold slop...

A macromodel for precise SPICE simulations of high-voltage power MOSFET is presented. The macromodel takes into account basic features of these devices as higher value of the resistance between channel and drain and lower current level though the body diode compared to low-voltage power MOSFET. It also considers that high-voltage power MOSFET work mostly in saturation regime. All required param...

4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics. However, it weakens the static characteristics such as specific on-resistance and breakdown voltage. To solve this problem, in paper, an Asymmetric Split Gate MOSFET diode (ASG-MOSFET) is propose...

The measurement of dose distributions in clinical brachytherapy, for the purpose of quality control, commissioning or dosimetric audit, is challenging and requires development. Radiochromic film dosimetry with a commercial flatbed scanner may be suitable, but careful methodologies are required to control various sources of uncertainty. Triple-channel dosimetry has recently been utilized in exte...

Efficiency is a large concern in power electronics but size and weight must be taken into consideration as well. Power devices in need of thermal sinks for appropriate performance will affect both size and weight. MOSFET devices are the main components in the power electronics world because of their comparatively promising characteristics in power loss and switching performance. The objective o...

Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and hence drain current. This paper presents an analytical model of the subthreshold drain current incorporating the effective electron mobility model of the pocket implanted nano scale n-MOSFET. The model is developed by assuming two linear pocket profiles at the source and drain edges at the surface and by u...