The design and measured results of a single-substrate transceiver module suitable for 76–77-GHz pulsed-Doppler radar applications are presented. Emphasis on ease of manufacture and cost reduction of commercial millimeter-wave systems is employed throughout as a design parameter. The importance of using predictive modeling techniques in understanding the robustness of the circuit design is stres...

Introduction Array coil preamplifiers are subjected to large magnetic fields since they are placed close to each coil to minimize SNR losses due to cabling. Noise figure (NF) and input impedance are key parameters that must vary minimally with magnetic field strength and orientation [1,2] to ensure there are no differences in performance between the bench and the bore. In this work we compare t...

Agrowing number of semiconductor technologies are being applied to RF power transistor applications. These technologies include Si LDMOS FET, SiGe HBT, InGaP HBT, GaAs MESFET, AlGaAs pHEMT, SiC MESFET and AlGaN/GaN HEMT. The dependencies of linearity and efficiency of such technologies are often common, such as transconductance derivatives, capacitance variations, breakdown effects and parasiti...

modulation (QAM) E-band communication system. The system can deliver 10 Gbps through eight channels with a bandwidth of 5 GHz (71-76 GHz/81-86 GHz). Each channel occupies 390 MHz and delivers 1.25 Gbps using a 16-QAM. Thus, this system can achieve a bandwidth efficiency of 3.2 bit/s/Hz. To implement the system, a driver amplifier and an RF up-/down-conversion mixer are implemented using a 0.1 μ...

Electron beam lithography is a viable option for exposure of high-resolution patterns such as t-gates in GaAs manufacturing, in part due to the speed and ease of use of modern electron beam direct write tools. In order to achieve greater speed, these tools utilize higher beam current densities and variable shaped beams. The resulting higher beam currents at the resist surface, however, can crea...

We report a high maximum frequency of oscillation ( f max ) and current-gain cutoff xmlns:xlink="http://www.w3.org/1999/xlink">T 800 260 GHz, respectively, with pseudomorphic high-electron mobility transistor (PHEMT), using an InGaAs/InAs composite channel asymmetric gate recess. This resu...

This paper presents a high efficiency, high switching frequency DC-DC buck converter in AlGaAs/GaAs technology, targeting integrated power amplifier modules for wireless communications. The switch mode, inductor load DC-DC converter adopts an interleaved structure with negatively coupled inductors. Analysis of the effect of negative coupling on the steady state and transient response of the con...