The results on measuring the I--V characteristics of metal-semiconductor transition within Ti (200 nm)|Si@O@Al (180 nm)|Ti (203 nm) test structure are presented. basis Si@O@Al nanocomposite is a solid solution Al in amorphous silicon a-Si(Al). has form characteristic reverse-biased ohmic contact between metal and p-type semiconductor, which implies that a-Si(Al) substitutional solution. It show...

In situ synchrotron X-radiography was carried out on Al–13Cu and Al–13Cu–7Si alloys with without addition of Al–5Ti–1B master alloy. The effects Si content grain growth the solute-suppressed nucleation zone (SSNZ) were quantitatively studied. average size can be refined to 164 ?m alloy inoculated by Al–5Ti–1B. After 7% content, a large number TiB2 sites in melt lost inoculating ability due “Si ...

The mechanical strength of an Al-30% Si alloy in the mushy zone was estimated by using a novel centrifugation apparatus. In the apparatus, the alloy melt was partially solidified, forming a porous structure made of primary Si platelets (Si foam) while cooling. Subsequently, pressure generated by centrifugal force pushed the liquid phase out of the foam. The estimated mechanical strength of the ...

Amygdaloidal, cavity- and fracture-filling zeolites in Eocene volcanic rocks from the Kuh-e-Aradeh of southern Kahrizak, in the northernmost part of Central Iran have been studied in some detail by optical, chemical analysis, SEM, and XRD techniques. The zeolites identified, in order of their relative time of formation from early to late, are tetranatrolite, analcime, natrolite, mesolite, stilb...

In this article, the anti-poison performance of novel Al-6Y-2P master alloy for impurity Ca in hypereutectic Al-Si alloys was investigated in detail. According to the microstructural analysis, it can be found that the primary Si and eutectic Si particles could be relatively modified and refined. In order to investigate the influence mechanism of Ca on the limited refinement performance of Al-6Y...

An ultra-low density fiberboard was made of plant fiber using a liquid frothing approach. The inflammability of the plant fiber limited its application as a candidate for building insulation materials and packaging buffering materials. Si-Al compounds were introduced into the foaming system because of the high temperature resistance of Si and Al compounds. The results from energy-dispersive spe...

With the help of density functional theory (DFT) approach the electronic properties of Al and Si doped (2, 2) graphyne nanotube (GNT) has been investigated. We have chosen two doping positions. In one situation we have replaced one carbon atom by Al/Si atom in the chain position of the GNT and in other case we have substituted the carbon atom in the hexagonal ring by Al/Si atom. The result of t...

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN ep...