We demonstrate a graphene-based electro-absorption modulator achieving extraordinary control of terahertz reflectance. By concentrating the electric field intensity in an active layer of graphene, an extraordinary modulation depth of 64% is achieved while simultaneously exhibiting low insertion loss (∼2 dB), which is remarkable since the active region of the device is atomically thin. This modu...

Rational control over the formation and processability, and consequently final properties of graphene oxide liquid crystalline dispersions has been a long-standing goal in the development of bottom-up device fabrication processes. Here we report, the principal conditions through which such levels of control can be exercised to fine-tune dispersion properties for further processing.

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

Original scientific paper By introducing a novel permanent magnetic bi-stable electromagnetic clutch unit (PMBECU) in the driveline of directly-driven electric vehicle, a flexible connection between motor and hub is realized with characteristic of separated starting process of drive motor and wheel load. Firstly, the working principle and power supply scheme for the PMBECU is discussed. Then th...

In this session we present a device to provide real time granular synthesis in Max/MSP with a multi-level control utility: a technical explanation and multiple sound examples are given. The device has originally been conceived as a part of the concert patch for the work exp.doc...et juv. for saxophone and live electronics, composed by Marta Gentilucci as final project within the IRCAM Learning ...

in this paper the optimal design of a dissipator made of aluminium and steel and principallysubjected to shear forces and the preliminary results of the characterization tests are described.the device has been designed on the basis of an optimization procedure with the objective tomaximize the energy dissipated in the device. the response of a 3d frame equipped with thedevice and subjected to 7...

One of the most important physical parameters to describe the quality of a piece of semiconductor material is the electron scattering length le. Also referred to as the mean-free path, it stands for the average distance between the randomly distributed scatterers in the material, such as lattice defects, impurities, and phonons. The electron mean-free path is typically a few nanometers (1 nm = ...