The ferromagnetic quantum phase transition in the perovskite ruthenate Sr1−xCaxRuO3 is studied by lowtemperature magnetization and electrical resistivity measurements on thin films. The films were grown epitaxially on SrTiO3 substrates using metalorganic aerosol deposition and characterized by X-ray diffraction and room temperature scanning tunneling microscopy. High residual resistivity ratios...

[1] We present the first use at a mid-ocean ridge of a recently developed broadband marine magnetotelluric (MT) instrument. The extended high frequency performance of the instrument allows resolution of electrical resistivity structure at shallower depths than traditional marine MT sensors. Our two-dimensional inversion model from data collected at four MT sites on the East Pacific Rise (EPR) a...

3 Ordered Cu-(35–50) at.% Pd alloys (B2-type superstructure) have a high corrosion resistance and are distinguished by possessing very low electrical resistivity r » (4–8) × 10 ohm m (1), two properties which make them of interest to researchers developing functional materials. However, wide-scale use of these alloys is hindered by their relatively poor strength properties: the yield stress of ...

Sinkholes in dolomitic areas are notoriously difficult geophysical targets, and selecting an appropriate geophysical solution is not straightforward. Electrical resistivity imaging, or tomography (RESTOM) is well suited to mapping sinkholes because of the ability of the technique for detecting resistive features and discriminating subtle resistivity variations. RESTOM surveys were conducted at ...

Raman spectroscopy, synchrotron angle-dispersive X-ray diffraction (ADXRD), first-principles calculations, and electrical resistivity measurements were carried out under high pressure to investigate the structural stability and electrical transport properties of metavanadate MgV2O6. The results have revealed the coordination change of vanadium ions (from 5+1 to 6) at around 4 GPa. In addition, ...

Ultra-low-energy secondary ion mass spectrometry has been used to undertake a structural analysis of GaN-In(x)Ga(1-x)N (x approximately 0.25) quantum wells used in optoelectronic devices. The high resistivity of intrinsic GaN-In(x)Ga(1-x)N restricts the necessary electrical path between the analyzed area and the instrument ground potential resulting in surface charge accumulation. Consequently,...

The relationship between photoemission spectra of high-Tc cuprates and their therPreprint submitted to Elsevier Science 6 February 2008 modynamic and transport properties are discussed. The doping dependence of the expected quasi-particle density at the Fermi level (EF) are compared with the electronic specific heat coefficient γ and that of the spectral weight at EF with the in-plane and out-o...

In this study, melt-spun Finemet ribbons were coated by a thin layer of SiO2 using dip coating method. Amorphous ribbon prepared by melt spinning method and dip coating were done by using a solution of tetraethylen orthosilicate as a SiO2 precursor, ethanol as solvent and distilled water for hydrolysis. Different thicknesses of SiO2 layer, namely 304, 349, 451, 526 and 970 nm were obtained prop...