Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nanopatterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15 nm low-temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of ...

The codeposition of Pb during Si (111) molecular beam homoepitaxy leads to high-quality crystalline films at temperatures for which films deposited on bare Si (111) are amorphous. Like other growth mediating elements-commonly called surfactants-Pb segregates to the film surface. Ion channeling and transmission electron microscopy reveal nearly defect-free epitaxy for a Pb coverage of one monola...

The requirement of lattice matching between a material and its substrate for the growth of defect-free heteroepitaxial crystals can be circumvented with van der Waals epitaxy (vdWE). However, the utilization and characteristics of vdWE in nonlamellar/nonplanar nanoarchitectures are still not very well-documented. Here we establish the characteristics of vdWE in nanoarchitectures using a case st...

In this article, we propose a crystallographic model to describe epitaxy of GaN on ~112̄0! sapphire ~A plane!. The ~11̄02! cleavage plane in sapphire is shown to extend to the GaN lattice as the ~112̄0! plane, facilitating the formation of cleaved facets. It is shown that, although the lattice mismatch is much smaller than in the case of epitaxy on ~0001!, the difference in the planar symmetry in ...