نتایج جستجو برای: field effect semiconductor device

تعداد نتایج: 2898443  

2003
O. H. Elibol D. Morisette D. Akin J. P. Denton R. Bashir

Semiconductor device-based sensing of chemical and biological entities has been demonstrated through the use of microand nanoscale field-effect devices and close variants. Although carbon nanotubes and silicon nanowires have been demonstrated as single molecule biosensors, the fabrication methods that have been used for creating these devices are typically not compatible with modern semiconduct...

2006
Xi Liu

Classification, essential properties, important applications and developement of power semiconductor devices will be explained. Some common power semiconductor devices, power metal oxide semiconductor field-effect transistor (MOSFET), thyristor and some new power devices will be described and discussed.

Journal: :Nano letters 2007
Hao Huang August Dorn Gautham P Nair Vladimir Bulović Moungi G Bawendi

We demonstrate reversible quenching of the photoluminescence from single CdSe/ZnS colloidal quantum dots embedded in thin films of the molecular organic semiconductor N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) in a layered device structure. Our analysis, based on current and charge carrier density, points toward field ionization as the dominant photoluminescence q...

1999
U. H. Liaw Y. K. Su

We performed the 1/f noise measurements on n-channel indium antimonide ~InSb! metal–oxide– semiconductor field-effect transistors ~MOSFETs! biased in linear and saturation regions operated at 77 K. Through the investigation of the dependence of drain voltage noise power spectral density on gate and drain bias, we have estimated the oxide–semiconductor interface trap density as a function of ene...

Journal: :Journal of Electronic Materials 2022

Abstract We propose the design and fabrication of a coplanar electrode structure for an organic metal–semiconductor field-effect transistor (OMESFET), with gate self-aligned between source drain electrodes. first used nanoimprint lithography (NIL) to define channel area device on patterned metal, then chemical wet etching create electrodes by removing metal in area. After etching, was deposited...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شهید بهشتی - دانشکده مهندسی برق و کامپیوتر 1389

چکیده ندارد.

Journal: :Journal of Photopolymer Science and Technology 2009

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