نتایج جستجو برای: g junction

تعداد نتایج: 490569  

Journal: :The Journal of neuroscience : the official journal of the Society for Neuroscience 1994
M Mynlieff K G Beam

The neuromodulator adenosine is known to decrease neurotransmitter release at the neuromuscular junction by activation of an A1 adenosine receptor coupled to a pertussis toxin-sensitive G protein. Among the mechanisms that could contribute to the depression of neurotransmitter release is reduced entry of calcium through channels located in the presynaptic terminal. In the present study, we have...

Journal: :Biomacromolecules 2003
Kurt Ingar Draget Bjørn T Stokke Yoshiaki Yuguchi Hiroshi Urakawa Kanji Kajiwara

Alginic acid gels were studied by small-angle X-ray scattering and rheology to elucidate the influence of alginate chemical composition and molecular weight on the gel elasticity and molecular structure. The alginic acid gels were prepared by homogeneous pH reduction throughout the sample. Three alginates with different chemical composition and sequence, and two to three different molecular wei...

Journal: :The American journal of physiology 1997
P R Brink K Cronin K Banach E Peterson E M Westphale K H Seul S V Ramanan E C Beyer

Homomeric gap junction channels are composed solely of one connexin type, whereas heterotypic forms contain two homomeric hemichannels but the six identical connexins of each are different from each other. A heteromeric gap junction channel is one that contains different connexins within either or both hemichannels. The existence of heteromeric forms has been suggested, and many cell types are ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه محقق اردبیلی - دانشکده علوم ریاضی 1391

در مورد معرفی عملگر پیش قاب و شرایط لازم و کافی که این عملگر در مورد -قاب و g-پایه های ریس می دهد می باشد.

Journal: :Applied Surface Science 2021

By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to increase in carrier concentration about 1.2x10^13 cm-2. The presence a distinct splittin...

Journal: :Applied Physics Letters 2021

High-quality III–V narrow bandgap semiconductor materials with strong spin–orbit coupling and large Landé g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, quantum computing. Indium antimonide (InSb) offers bandgap, high carrier mobility, small effective mass and, thus, is very appealing this context. In fact, material ha...

Journal: :Journal of the American Chemical Society 1920

We investigate adiabatic pumping current in a graphene based normal-insulator-superconductor (NIS) junction with Corbino disk structure. The adiabatic pumping current is generated by two electrostatic potentials, oscillating periodically and out of phase, applied to the insulating and superconducting regions. Using the extended Brouwer’s formula for the adiabatic pumping current, which is based...

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