This paper presents a complete behavioral PSpice model for IGBT transistor. A voltage dependent capacitance is modeled using a second order polynomial and “arctan” function. The simulation results for I-V static and transfer characteristics and their comparisons with datasheets are shown. The dynamic model verification is carried out using PSpice simulations and experimental measurements of the...

Voltage Source Converters (VSC) have for the first time been used for HVDC transmission in a real network. Experience from the design and commissioning of the transmission shows that the technology has now reached the stage where it is possible to build high voltage converters utilising Insulated Gate Bipolar Transistors (IGBTs). Operation and system tests have proved that the properties that h...

This paper presents a model reduction approach for constructing lumped RC thermal networks of IGBTmodules of inverters for which heat and subsequent temperature increases vary with time on different scales ranging from nanosecond to second. It was observed that the time-dependent heat and temperature profiles of transistors and diodes of IGBT-modules of inverters oscillate at two frequencies, o...

A novel insulated gate bipolar transistor (IGBT) entitled NPN aided fast switching IGBT (NFS-IGBT) with a P-buffer layer is presented, which enhances the switching speed greatly. Compared with the conventional IGBT, double sided NPN structure is incorporated into the anode to facilitate the turn-off process. The proposed structure is verified by two-dimensional mixed device-circuit simulation, ...

AbstructIGBT’s are available with short-circuit withstand times approaching those of bipolar transistors. These IGBT’s can therefore be protected by the same relatively slow-acting circuitry. The more efficient IGBT’s, however, have lower shortcircuit withstand times. While protection of these types of IGBT’s is not difficult, it does require a reassessment of the traditional protection methods...

The aim of this study is to achieve online monitoring the junction temperature double-sided-cooling insulated gate bipolar transistor (IGBT) power modules by using on-state voltage under a high current maximize utilization IGBT chips. Online measurement plays an important role in improving reliability inverter with IGBT, increasing density motor controller electric vehicles, and reducing cost v...

A novel recognition method for selective determination of the hyoscine N-Butyl bromide (HBB), an antispasmodic agent for smooth muscles, was devised using extended gate field-effect transistor (EG-FET) as transducing unit. For this purpose a PVC membrane, containing hyoscine n-butyl-tetraphenyl borate ion-pair as recognition component, was coated on Ag/AgCl wire, which was connected to the exte...

Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with a Bloch equation model using a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings ...

Conventional CMOS technology's performance deteriorates due to increased short channel effects. Double-gate (DG) FinFETs has better short channel effects performance compared to the conventional CMOS and stimulates technology scaling. The main drawback of using CMOS transistors are high power consumption and high leakage current. Fin-type field-effect transistors (FinFETs) are promising substit...