We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...

This paper describes the characteristics comparison of bulk FINFET and SOI FINFET. The scaling trend in device dimension require limit on short channel effect through the control of subthreshold slope and DIBL characteristics.It can be achieved by proper device design. The subthreshold characteristics are plotted with the variation of gate voltage for different doping profile .This paper also c...

A threshold-logic gate device consisting of subthreshold MOSFET circuits is proposed. The gate device performs threshold-logic operation, using the technique of current-mode addition and subtraction. Sample digital subsystems, i.e., adders and morphological operation cells based on threshold logic, are designed using the gate devices, and their operations are confirmed by computer simulation. T...

One of the major limiting factors of the CMOS device, circuit and system simulation in sub 100nm regimes is the statistical variability introduced by the discreteness of charge and granularity of matter. The statistical variability cannot be eliminated by tuning the layout or by tightening fabrication process control. Since the compact models are the key bridge between technology and design, it...

When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equiv...

The present paper describes the recent developments in the device engineering for microelectronics and nanoelectronics. The perspectives for the future show a narrow margin in silicon technology. Hence Engineering in Devices and materials becomes a must. The investigation carried out illustrates the various materials technology that can lengthen the silicon technology lifetime and eventually br...

INSIDE Drift-Diffusion Mode-Space Approach to Subband Transport in Devices with Transverse Quantum Confinement ......................................... 3 Monte Carlo Device Modeling of a Self-Aligned n-MOSFET ........................................................... 8 MixedMode Netlist Generation Using Gateway ..... 11 Hints, Tips and Solutions ......................................... 14 Or...

In this paper, we report on the design and evolution of a 500W, 27 MHz Class E amplifier. It doubles the operating frequency of previous high efficiency amplifiers using MOSFET transistors in the TO-247 package. Device criteria, circuit design, and amplifier performance characteristics are presented and compared to a HEPA computer model.