Optimizing wireless network operations can be achieved by transmission power control of wireless nodes, which is mostly performed by regulating the final power amplifier. Depending on the desired transmission power level, currently popular amplifiers work at different levels of efficiency: highest in case of maximum output power, lower in case of reduced output power. As the power amplifier is ...

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In this paper, a system level behavioural model for RF power amplifier, which exhibits memory effects, and based on multibranch system is proposed. When higher order terms are included, the memory polynomial model (MPM) exhibits numerical instabilities. A set of memory orthogonal polynomial model (OMPM) is introduced to alleviate the numerical instability problem associated to MPM model. A data...

Co-design of digital signal-processing (DSP) algorithms and power-amplifier characteristics can lead to improved efficiency and linearity through a variety of strategies including: predistortion, DSP control over bias conditions, particularly the power supply voltage, and DSP generation of digital input signals for switching amplifiers. This paper discusses several amplifier architectures that ...

In this paper we propose a novel functional amplifier suitable for low-power wireless receivers in a wireless sensor network. This amplifier can change input threshold level as carrier sensing level, since it has a minimum input amplitude to be amplified. A simple rail-to-rail output is suitable for a subsequent digital interface. The target frequency is 433 MHz, and the maximum voltage gain is...

In this paper, a new CMOS power amplifier that can operate at 70 GHz is designed and developed. The advantages of using 70 GHz at millimeter wave (mmW) band is the huge amount of bandwidth available for various purposes whether they are in the cellular industry or manufacture devices such as high bandwidth wireless LAN and low attenuation of bandwidth frequencies around 70 GHz bands comparing w...

In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5–3.8GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20W (43 dBm) output power with 80%...

Recently, the rising the demand of Darlington products for the high data rate communication system. Darlington transistors are used in applications where a high gain is needed at a low frequency. Recently Darlington cell and Darlington topology have been reported high gain and good bandwidth for modern application. In modern communication Darlington amplifier is versatile used in low noise ampl...

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