نتایج جستجو برای: resistor network model
تعداد نتایج: 2596093 فیلتر نتایج به سال:
We study the effect on the distribution of return periods of rare events of the presence in a time series of finite-term correlations with non-exponential decay. Precisely, we analyze the auto-correlation function and the statistics of the return intervals of extreme values of the resistance fluctuations displayed by a resistor with granular structure in a nonequilibrium stationary state. The r...
This report addresses the issues concerning analysis of an electric circuit composed multiple resistors configured in a 3-Dimension structure. Noting, all standard textbooks physics and engineering irrespective used components are circuits assembled two dimensions. Here, by deviating from “norm” we consider case where arranged 3D structure; e.g., cube. Although, independent dimension design sam...
The degradation of ultrathin oxide layers in the presence of a stress voltage is modeled in terms of two antagonist percolation processes taking place in a random resistor network. The resistance and leakage current fluctuations are studied by Monte Carlo simulations for voltages below the breakdown threshold. An increase of excess noise together with a noticeable non-Gaussian behavior is found...
We show that transport in high contrast, conductive media has a discrete behavior. In the asymptotic limit of innnitely high contrast, the eeective impedance and the magnetic eld in such media are given by discrete min-max variational principles. Furthermore, we show that the transport problem has an asymptotic, resistor-inductor-capacitor network approximation. We use new variational formulati...
the safety of buried pipes under repeated load has been a challenging task in geotechnical engineering. in this paper artificial neural network and regression model for predicting the vertical deformation of high-density polyethylene (hdpe), small diameter flexible pipes buried in reinforced trenches, which were subjected to repeated loadings to simulate the heavy vehicle loads, are proposed. t...
In this paper, a model for MEMS capacitive microphone is presented for integrated circuits. The microphone has a diaphragm thickness of 1 μm, 0.5 × 0.5 mm2 dimension, and an air gap of 1.0 μm. Using the analytical and simulation results, the important features of MEMS capacitive microphone such as pull-in voltage and sensitivity are obtained 3.8v and 6.916 mV/Pa, respectively while there is no...
An electron nematic is a translationally invariant state which spontaneously breaks the discrete rotational symmetry of a host crystal. In a clean square lattice, the electron nematic has two preferred orientations, while dopant disorder favors one or the other orientations locally. In this way, the electron nematic in a host crystal maps to the random field Ising model. Since the electron nema...
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