We report a non-lithographical method for the fabrication of ultra-thin silicon (Si) nanowire (NW) and nano-sheet arrays through metal-assisted-chemical-etching (MacEtch) with gold (Au). The mask used for metal patterning is a vertical InAs NW array grown on a Si substrate via catalyst-free, strain-induced, one-dimensional heteroepitaxy. Depending on the Au evaporation angle, the shape and size...

Abstract Today gold is used as contact material on electric contacts for low current applications. Gold, however, has low wear resistance, is expensive and environmentally stressful to produce. An alternative contact material to gold is nano composite Ti-Si-C-Ag deposited with DC-magnetron sputtering. Nano composite Ti-Si-C-Ag has so far been deposited by a compound Ti-Si-C sputter target with ...

The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+ plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer st...

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and s...

In this paper, variability analysis of a graded-channel dual-material (GCDM) double-gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed using Sentaurus TCAD. By varying the different device parameters, proposed GCDM-DG s-Si respect to variations in threshold voltage, drain current, and short-channel effects as line edge roughness fluctuations random dopant, contact resistanc...

Mechanical bending is ubiquitous in heteroepitaxial growth of thin films where the strained growing film applies effectively an “external” stress to bend the substrate. Conventionally, when the deposited film is much thinner than the substrate, the bending increases linearly with increasing film thickness following the classical Stoney formula. Here we analyze the bending of ultrathin nanometer...

The dewetting of ultrathin silicon layers, induced by the thermal budget, is an issue to develop SOI-based technology. This study aims at demonstrating the effect of the strain on the dewetting mechanism [1] (Figure 1). For that purpose, we present the results obtained on (001) oriented ultrathin (<11 nm) silicon layers on silicon dioxide (SOI). Both stress-free and strained (s-SOI) films fabri...

We have investigated the optical properties of tensile-strained germanium photonic wires. The photonic wires patterned by electron beam lithography (50 μm long, 1 μm wide and 500 nm thick) are obtained by growing a n-doped germanium film on a GaAs substrate. Tensile strain is transferred in the germanium layer using a Si₃N₄ stressor. Tensile strain around 0.4% achieved by the technique correspo...

Based on molecular dynamics search for laws of wearless friction accompanying steady sliding motion between mesoscopic crystal lattices, we have been developing “Phonon-Band Engineering” approaches [1] to design arti…cial materials of desired tribological characteristics for nano-electromechanical systems (NEMS) by utilizing the up-to-date nano-fabrication technology. In the present study, we r...