The operation of digital circuits from power supply voltage of the order of 200mv or less imposes that, in general MOSFETs biased in the sub threshold regime, characterized by the exponential relation between the control voltages and the current. In this paper we analyze some of the basic building blocks of digital circuits operating in the sub threshold region. We analyze the basic CMOS invert...

This paper proposes a low voltage CMOS Nano power current reference circuit and presents its performance with circuit simulation in 180nm UMC CMOS technology. The proposed circuit consists of start-up, Bias-voltage, currentsource sub-circuits with most of the MOSFETs operating in sub-threshold region. Simulation results shows that the circuit generates a stable reference current of 4-nA in supp...

The influence of small ferroelectric BaTiO3 particles on the planar-homeotropic transition threshold voltage in smectic A liquid crystals consisting of p-nitrophenyl p-decyloxybenzoate and 4-cyano-4'-pentylbiphenyl were studied by using capacitance-voltage (C-V) measurements. It was shown that the BaTiO3 particles significantly reduce the threshold voltage. The obtained result is explained by t...

Deep-submicron CMOS designs maintain high transistor switching speeds by scaling down the supply voltage and proportionately reducing the transistor threshold voltage. Lowering the threshold voltage increases leakage energy dissipation due to subthreshold leakage current even when the transistor is not switching. Estimates suggest a five-fold increase in leakage energy in every future generatio...

This paper provides the extracted values of the parameters affecting the threshold voltage model of SOI MOSFET. The parameter extraction is done for BSIMSOI4.3 MOSFET model. The proposed procedure is designed to give the results based on the device characteristics data. Simulations are performed using the extracted parameters and finally it is compared for extracted parameters and generic devic...

ABSTRACT Characteristics of variable threshold voltage CMOS (VTCMOS) in the series connected circuits are investigated by means of device simulation. It is newly found that the performance degradation due to the body effect in series connected circuit is suppressed by utilizing VTCMOS. Lowering the threshold voltage (Vth) enhances the drive current and alleviates the degradation due to the seri...

In this article, we proposed a Variable threshold MOSFET(VTMOS)approach which is realized from Dynamic Threshold MOSFET(DTMOS), suitable for sub-threshold digital circuit operation .Basically the principle of subthreshold logics is operating MOSFET in sub-threshold region and using the leakage current in that region for switching action, there by drastically decreasing power .To reduce the powe...

As NAND Flash memory process technology scales below 32nm and the number of charge levels per cell exceeds four, cell threshold voltage distributions must be narrower in order to prevent errors resulting from distribution overlap [3, 5, 6]. An obstacle to achieving narrow distributions is the floating-gate (FG) to floating-gate coupling [4, 6]. This coupling shifts the threshold voltages by a d...

A technique for low-voltage CMOS analog circuit design is presented in this paper. In this technique, voltage sources are added in series with the gates of the MOS transistors to lower the effective threshold voltages of the transistors. With the lowered effective threshold voltage, it is possible to build a host of analog circuit that operates with a decreased supply voltage. A 0.6V ultra-low ...