Abstract In this paper, we investigate the influence of Poole–Frenkel effect (PFE) on dynamic R ON transients in C-doped p-GaN HEMTs. To aim, perform a characterization acquired during OFF-state stress (i.e. V GS,STR = 0 < T , DS,STR 25–125 V) and interpret results with aid numerical simulations. We find that at room temperature accelerate 1/2 which is signature PFE, as further confirmed by ...
